Session information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21a-E310-1~10] 15.4 III-V-group nitride crystals

Sat. Sep 21, 2019 9:00 AM - 11:45 AM E310 (E310)

Hisashi Murakami(TUAT), Shugo Nitta(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

△ [21a-E310-1] Suppression of the Step Bunching in GaN Crystals grown by Sodium-Flux Method using Purified Sodium

〇(B)Hyoga Yamauchi¹, Takumi Yamada², Masayuki Imanishi², Mikito Ueda³, Yusuke Mori² (1.Sch. of Eng. Osaka Univ., 2.Grad. Sch. of Eng. Osaka Univ., 3.Grad. Sch. of Eng. Hokkaido Univ.)

9:15 AM - 9:30 AM

△ [21a-E310-2] Suppression of polycrystal generation on lithium added flux for enhancement of GaN growth on Na flux point seed method

〇Kazuma Hamada¹, Takumi Yamada¹, Kosuke Murakami¹, Masayuki Imanishi¹, Masashi Yoshimura^1,2, Yusuke Mori¹ (1.Grad. sch. of Eng. Osaka univ., 2.ILE. Osaka univ.)

9:30 AM - 9:45 AM

△ [21a-E310-3] [Highlight]Dislocation Annihilation in a Large-Diameter GaN Crystal Grown on Point Seeds by the Na-Flux Method

〇Masayuki Imanishi¹, Kanako Okumura¹, Kousuke Nakamura¹, Keisuke Kakinouchi¹, Tomoko Kitamura¹, Kousuke Murakami¹, Masashi Yoshimura^1,2, Yusuke Mori¹ (1.Osaka Univ., 2.ILE, Osaka Univ.)

9:45 AM - 10:00 AM

[21a-E310-4] Burgers vector Identifications of the annihilated dislocations in Na-flux grown GaN Substrates

〇(M2)Yu Fujita¹, Yoshiyuki Tsusaka¹, Junji Matsui², Masayuki Imanishi³, Yusuke Mori³ (1.Grad. Sch. of Material Sci. Univ. of Hyogo, 2.Syn. Rad. Nano-Tech. Lab., 3.Grad. Sch. of Eng. Osaka Univ.)

10:00 AM - 10:15 AM

△ [21a-E310-5] Leakage current analysis for individual threading dislocations in HVPE-GaN bulk single crystals

〇Takeaki Hamachi¹, Masato Fujimoto¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Masayuki Imanishi², Yusuke Mori², Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ.)

10:15 AM - 10:30 AM

△ [21a-E310-6] GaN bulk Crystal Growth by the Acidic Ammonothermal Method

〇kouhei kurimoto^1,2, quanxi bao^1,2, makoto saito^1,3, rinzo kayano², daisuke tomida¹, kouhei shima¹, kazunobu kojima¹, toru ishiguro¹, shigefusa chichibu¹ (1.IMRAM-Tohoku Univ., 2.Japan Steel Work., 3.Mitsubishi Chemical Corp.)

10:45 AM - 11:00 AM

[21a-E310-7] [INVITED] Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping

〇Nobuhiko Kokubo¹, Yosuke Tsunooka¹, Fumihiro Fujie¹, Junji Ohara², Shoichi Onda¹, Hisashi Yamada³, Mitsuaki Shimizu³, Harada Shunta¹, Miho Tagawa¹, Toru Ujihara¹ (1.Nagoya Univ., 2.DENSO, 3.AIST)

11:00 AM - 11:15 AM

[21a-E310-8] Thermal annealing effects on SCAAT^TM substrate grown toward m-direction

〇Kenji Iso¹, Yutaka Mikawa¹, Hirotaka Ikeda¹, Kazuhiro Hotta¹, Tae Mochizuki¹, Satoru Izumisawa¹ (1.Mitsubishi Chem.)

11:15 AM - 11:30 AM

[21a-E310-9] Reuse Method of GaN Substrate by Using Laser Slicing Techniques

Atsushi Tanaka^1,2, 〇Yasunori Igasaki¹, Hiroshi Amano^1,2,3,4 (1.Nagoya Univ. IMaSS, 2.NIMS, 3.Nagoya Univ. ARC, 4.NU VBL)

11:30 AM - 11:45 AM

[21a-E310-10] Evaluation of GaN Substrate Sliced by Using Laser Slicing Techniques

〇Atsushi Tanaka^1,2, Yasunori Igasaki¹, Hiroshi Amano^1,2,3,4 (1.Nagoya Univ. IMaSS, 2.NIMS, 3.Nagoya Univ. ARC, 4.NU VBL)

Authentication

Password authentication.
Password is required to view the PDF. Please enter a password to authenticate.

The password has been sent to pre-registrants.
For onsite registrants, please refer to the back of the name badge.
The password will be sent to all JSAP members in March 2020.

Please log in with your participant account.
» Participant Log In

▲