Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21a-E310-1~10] 15.4 III-V-group nitride crystals

Sat. Sep 21, 2019 9:00 AM - 11:45 AM E310 (E310)

Hisashi Murakami(TUAT), Shugo Nitta(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [21a-E310-1] Suppression of the Step Bunching in GaN Crystals grown by Sodium-Flux Method using Purified Sodium

〇(B)Hyoga Yamauchi¹, Takumi Yamada², Masayuki Imanishi², Mikito Ueda³, Yusuke Mori² (1.Sch. of Eng. Osaka Univ., 2.Grad. Sch. of Eng. Osaka Univ., 3.Grad. Sch. of Eng. Hokkaido Univ.)

9:15 AM - 9:30 AM

△ [21a-E310-2] Suppression of polycrystal generation on lithium added flux for enhancement of GaN growth on Na flux point seed method

〇Kazuma Hamada¹, Takumi Yamada¹, Kosuke Murakami¹, Masayuki Imanishi¹, Masashi Yoshimura^1,2, Yusuke Mori¹ (1.Grad. sch. of Eng. Osaka univ., 2.ILE. Osaka univ.)

9:30 AM - 9:45 AM

△ [21a-E310-3] [Highlight]Dislocation Annihilation in a Large-Diameter GaN Crystal Grown on Point Seeds by the Na-Flux Method

〇Masayuki Imanishi¹, Kanako Okumura¹, Kousuke Nakamura¹, Keisuke Kakinouchi¹, Tomoko Kitamura¹, Kousuke Murakami¹, Masashi Yoshimura^1,2, Yusuke Mori¹ (1.Osaka Univ., 2.ILE, Osaka Univ.)

9:45 AM - 10:00 AM

[21a-E310-4] Burgers vector Identifications of the annihilated dislocations in Na-flux grown GaN Substrates

〇(M2)Yu Fujita¹, Yoshiyuki Tsusaka¹, Junji Matsui², Masayuki Imanishi³, Yusuke Mori³ (1.Grad. Sch. of Material Sci. Univ. of Hyogo, 2.Syn. Rad. Nano-Tech. Lab., 3.Grad. Sch. of Eng. Osaka Univ.)

10:00 AM - 10:15 AM

△ [21a-E310-5] Leakage current analysis for individual threading dislocations in HVPE-GaN bulk single crystals

〇Takeaki Hamachi¹, Masato Fujimoto¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Masayuki Imanishi², Yusuke Mori², Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ.)

10:15 AM - 10:30 AM

△ [21a-E310-6] GaN bulk Crystal Growth by the Acidic Ammonothermal Method

〇kouhei kurimoto^1,2, quanxi bao^1,2, makoto saito^1,3, rinzo kayano², daisuke tomida¹, kouhei shima¹, kazunobu kojima¹, toru ishiguro¹, shigefusa chichibu¹ (1.IMRAM-Tohoku Univ., 2.Japan Steel Work., 3.Mitsubishi Chemical Corp.)

10:45 AM - 11:00 AM

[21a-E310-7] [INVITED] Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping

〇Nobuhiko Kokubo¹, Yosuke Tsunooka¹, Fumihiro Fujie¹, Junji Ohara², Shoichi Onda¹, Hisashi Yamada³, Mitsuaki Shimizu³, Harada Shunta¹, Miho Tagawa¹, Toru Ujihara¹ (1.Nagoya Univ., 2.DENSO, 3.AIST)

11:00 AM - 11:15 AM

[21a-E310-8] Thermal annealing effects on SCAAT^TM substrate grown toward m-direction

〇Kenji Iso¹, Yutaka Mikawa¹, Hirotaka Ikeda¹, Kazuhiro Hotta¹, Tae Mochizuki¹, Satoru Izumisawa¹ (1.Mitsubishi Chem.)

11:15 AM - 11:30 AM

[21a-E310-9] Reuse Method of GaN Substrate by Using Laser Slicing Techniques

Atsushi Tanaka^1,2, 〇Yasunori Igasaki¹, Hiroshi Amano^1,2,3,4 (1.Nagoya Univ. IMaSS, 2.NIMS, 3.Nagoya Univ. ARC, 4.NU VBL)

11:30 AM - 11:45 AM

[21a-E310-10] Evaluation of GaN Substrate Sliced by Using Laser Slicing Techniques

〇Atsushi Tanaka^1,2, Yasunori Igasaki¹, Hiroshi Amano^1,2,3,4 (1.Nagoya Univ. IMaSS, 2.NIMS, 3.Nagoya Univ. ARC, 4.NU VBL)

Session information

[21a-E310-1~10] 15.4 III-V-group nitride crystals

△ [21a-E310-1] Suppression of the Step Bunching in GaN Crystals grown by Sodium-Flux Method using Purified Sodium

△ [21a-E310-2] Suppression of polycrystal generation on lithium added flux for enhancement of GaN growth on Na flux point seed method

△ [21a-E310-3] [Highlight]Dislocation Annihilation in a Large-Diameter GaN Crystal Grown on Point Seeds by the Na-Flux Method

[21a-E310-4] Burgers vector Identifications of the annihilated dislocations in Na-flux grown GaN Substrates

△ [21a-E310-5] Leakage current analysis for individual threading dislocations in HVPE-GaN bulk single crystals

△ [21a-E310-6] GaN bulk Crystal Growth by the Acidic Ammonothermal Method

[21a-E310-7] [INVITED] Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping

[21a-E310-8] Thermal annealing effects on SCAAT^TM substrate grown toward m-direction

[21a-E310-9] Reuse Method of GaN Substrate by Using Laser Slicing Techniques

[21a-E310-10] Evaluation of GaN Substrate Sliced by Using Laser Slicing Techniques

Authentication

Session information

[21a-E310-1~10] 15.4 III-V-group nitride crystals

△ [21a-E310-1] Suppression of the Step Bunching in GaN Crystals grown by Sodium-Flux Method using Purified Sodium

△ [21a-E310-2] Suppression of polycrystal generation on lithium added flux for enhancement of GaN growth on Na flux point seed method

△ [21a-E310-3] [Highlight]Dislocation Annihilation in a Large-Diameter GaN Crystal Grown on Point Seeds by the Na-Flux Method

[21a-E310-4] Burgers vector Identifications of the annihilated dislocations in Na-flux grown GaN Substrates

△ [21a-E310-5] Leakage current analysis for individual threading dislocations in HVPE-GaN bulk single crystals

△ [21a-E310-6] GaN bulk Crystal Growth by the Acidic Ammonothermal Method

[21a-E310-7] [INVITED] Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping

[21a-E310-8] Thermal annealing effects on SCAATTM substrate grown toward m-direction

[21a-E310-9] Reuse Method of GaN Substrate by Using Laser Slicing Techniques

[21a-E310-10] Evaluation of GaN Substrate Sliced by Using Laser Slicing Techniques

Authentication

[21a-E310-8] Thermal annealing effects on SCAAT^TM substrate grown toward m-direction