Session information

Poster presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[21a-PA2-1~31] 6.3 Oxide electronics

Sat. Sep 21, 2019 9:30 AM - 11:30 AM PA2 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:30 AM - 11:30 AM

[21a-PA2-1] Anisotropy control in ferromagnetic-antiferromagnetic transition of GdBaCo₂O_5.5 films

〇Tsukasa Katayama¹, Akira Chikamatsu¹, Yujun Zhang², Hiroki Wadati², Kento Magara¹, Tetsuya Hasegawa¹ (1.Univ. of Tokyo, 2.Univ. of Hyogo)

9:30 AM - 11:30 AM

[21a-PA2-2] Investigation of temperature dependence of strain effect of single crystal VO₂ wires on
flexible sheet

〇Fumiya Endo¹, Teruo Kanki¹, Luca Pellegrino², Nicola Manca³, Daniele Marre^2,3, Hidekazu Tanaka¹ (1.ISIR, Osaka Univ., 2.CNR-SPIN, 3.Genova Univ.)

9:30 AM - 11:30 AM

▲ [21a-PA2-3] Film thickness variation mediated interfacial strain crossover in epitaxial VO₂ films

〇(P)Dooyong Lee^1,2, Sehwan Song¹, Jiwoong Kim¹, Sungkyun Park¹ (1.Pusan National University, 2.Institute for Molecular Science)

9:30 AM - 11:30 AM

[21a-PA2-4] Efficiency of charge to spin current conversion at NiFe/IrO₂ interfaces

〇(M1)Naoki Moriuchi¹, Kenta Fukushima¹, Takanori Kida², Masayuki Hagiwara², Kohei Ueda¹, Jobu Matsuno¹ (1.Osaka Univ., 2.AHMF, Osaka Univ.)

9:30 AM - 11:30 AM

[21a-PA2-5] Spin current transmission at Y₃Fe₅O₁₂/IrO₂ interfaces

〇(M1)Kenta Fukushima¹, Naoki Moriuchi¹, Takanori Kida², Masayuki Hagiwara², Kohei Ueda¹, Jobu Matsuno¹ (1.Osaka Univ., 2.AHMF, Osaka Univ.)

9:30 AM - 11:30 AM

[21a-PA2-6] Composition control of YbFe₂O₄ epitaxial thin films and the effects on the electric, magnetic and optical properties

〇(M2)Jyunpei Tanaka¹, Kouhei Miura¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Prefecture Univ.)

9:30 AM - 11:30 AM

[21a-PA2-7] Fabrication of the two terminal ReNiO₃proton resistor with asymmetric electrodes and its switching property

〇Shin Nonaka¹, Sidik Umar¹, Azusa Hattori¹, Hidekazu Tanaka¹ (1.ISIR Osaka Univ.)

9:30 AM - 11:30 AM

[21a-PA2-8] The effects of bottom electrodes on the epitaxial growth of YbFe₂O₄ thin films

〇Kento Shimamoto¹, Kohei Miura¹, Junpei Tanaka¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Prefecture Univ.)

9:30 AM - 11:30 AM

△ [21a-PA2-9] Structural characterization of WO₃ films grown by MBE on a LSAT substrate

〇Ryota Nakamura¹, Mikio Mizuno¹, Kazuto Koike¹, Mitsuaki Yano¹, Katsuhiko Inaba², Shintaro Kobayashi² (1.Osaka Inst. of Tech., NMRC, 2.Rigaku Corp., X-Ray Res. Lab.)

9:30 AM - 11:30 AM

[21a-PA2-10] Surface reaction of α-Al₂O₃ single crystalline substrate with water in pressure medium under ultra-high pressure

〇(D)Yuki Sasahara¹, Koki Kanatani¹, Masayuki Matsuhisa¹, Yuji Wada¹, Ryota Shimizu^1,2, Norimasa Nishiyama³, Taro Hitosugi¹ (1.Tokyo Tech, 2.JST-PRESTO, 3.MSL)

9:30 AM - 11:30 AM

[21a-PA2-11] Thermochromic characteristic of RF sputtered VO₂ film

〇Joonam Kim^1,2, Ejiri Takuto¹, Sugiyama Mutsumi^1,2 (1.Tokyo Univ. of Sci., 2.RIST)

9:30 AM - 11:30 AM

[21a-PA2-12] Synthesis of Cu₂O Epitaxial Thin Films by Mist Chemical Vapor Deposition

〇Daichi Oka¹, Tomoteru Fukumura^1,2 (1.Tohoku Univ., 2.Tohoku Univ. AIMR & CRC)

9:30 AM - 11:30 AM

[21a-PA2-13] Role of a Substrate on nano-scale Topotactic Redox Reaction of SrFeO_3-x Thin Films

〇Yasushi Hirose¹, Shunya Tanaka¹, Tetsuya Hasegawa¹ (1.Univ. of Tokyo)

9:30 AM - 11:30 AM

[21a-PA2-14] Growth of VO₂ films on ZnO-nanorod buffered glasses and their optical properties (Ⅲ)

〇Tatsuro Hukuzumi¹, Kunio Okimura², Iwao Yamaguchi³, Tetsuo Tsuchiya³ (1.Graduate School of Engineering Tokai Univ, 2.School of Engineering Tokai Univ, 3.AIST)

9:30 AM - 11:30 AM

[21a-PA2-15] A simulation model of VO₂ layered devices and its application to coupled oscillation phenomena

〇Ryuta Tobe¹, Kunio Okimura², Md Suruz Mian² (1.Grad. Sch. Eng., Tokai Univ., 2.Sch. Eng.,Tokai Univ.)

9:30 AM - 11:30 AM

[21a-PA2-16] Neuromorphic Resistivity Modulation of Pt/Ti_0.99Sc_0.01O_2-d/Pt cross-point structure

Takeshi Fujita¹, Kinya Kawamura¹, Tsunetomo Yamada¹, Ryu Yukawa², Koji Horiba², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.KEK)

9:30 AM - 11:30 AM

[21a-PA2-17] Electronic structure and metal-insulator transition of VO₂ thin films deposited on NiO/Al₂O₃

Takehiro Imagawa¹, Junpei Oikawa¹, Tsunetomo Yamada¹, Ryu Yukawa², Koji Horiba², Hiroshi Kumigashira^2,3, 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.KEK, 3.Tohoku Univ.)

9:30 AM - 11:30 AM

[21a-PA2-18] Stable and Consecutive Multiple Resistance Change in a Molecular-gap Atomic Switch

〇(M2)Ai Kassai¹, Tsuyoshi Hasegawa¹ (1.Waseda Univ.)

9:30 AM - 11:30 AM

[21a-PA2-19] Fabrication and Comparison of Resistive Switching Device using Ta₂O₅ by Wet and Dry Process

〇(B)Hidekazu Komaki¹, Takahiko Ban¹, Shin-Ichi Yamamoto¹ (1.Ryukoku Univ.)

9:30 AM - 11:30 AM

[21a-PA2-20] Resistivity improvement of zinc oxide transparent conductive film by spin-coating method

〇Takumi Nojiri¹, Naoki Ohtani¹ (1.Doshisha Univ.)

9:30 AM - 11:30 AM

[21a-PA2-21] Examination of Zn Addition to AZO Thin Films by Magnetron Sputtering Method

〇Hidehiko Shimizu¹, Haruo Iwano¹, Takahiro Kawakami¹, Yasuo Fukushima¹, Koutaro Nagata¹ (1.Niigata Univ.)

9:30 AM - 11:30 AM

[21a-PA2-22] Effects of in-situ post-annealing for crystalline structures and electrical properties of Al-doped ZnO films on the glass substrate in magnetron sputtering

〇Toshiki Suwa¹, Tadashi Nakamura¹, Kunio Okimura¹ (1.Tokai Univ.)

9:30 AM - 11:30 AM

[21a-PA2-23] Physical property variations of NFO films with additional Fe amount

〇(M2)Masaya Hirano¹, Kaito Beppu¹, Hiroshi Morita¹ (1.Sanyo-Onoda Univ.)

9:30 AM - 11:30 AM

[21a-PA2-24] Fabrication of Cu₂O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by low-damage magnetron sputtering method

〇Hiroki Tokunaga¹, Toshihiro Miyata¹, Tadatsugu Minami¹ (1.KIT)

9:30 AM - 11:30 AM

[21a-PA2-25] Charge/discharge properties of 3-dimensional TiO₂-polyaniline cell with stacked interdigited-structure

〇(M1)Yuzo Komori¹, Kyohei Akiyoshi¹, Teruaki Nomiyama¹, Yuji Horie¹, Akira Kokeguchi² (1.Kagoshima Univ., 2.JSSJ)

9:30 AM - 11:30 AM

[21a-PA2-26] Photocatalytic decomposition of gaseous methanol over Cu₂O-loaded TiO₂ nanostructures

〇Hayato Goto¹, Hikaru Masegi¹, Kei Noda¹ (1.Keio Univ.)

9:30 AM - 11:30 AM

[21a-PA2-27] Photocharge and discharge characteristics of WO₃ nanofibers sensitized by Fe₂O₃

〇(M1C)Kazuki Taguchi¹, Takuya Matsuda¹, Taito Kumamoto¹, Teruaki Nomiyama¹, Yuji Horie¹ (1.Kagoshima Univ.)

9:30 AM - 11:30 AM

▲ [21a-PA2-28] Recombination Mechanism in BiVO4 Photocatalyst Studied by Photoluminescence

〇(D)ABDELLAOUI imane IMANE¹, Kazuya Tajima¹, Takato kawagushi², Shigeru Ikeda², Mohamed Monirul Islam¹, Takeaki Sakurai¹ (1.Tsukuba Univ, 2.Konan Univ)

9:30 AM - 11:30 AM

[21a-PA2-29] Fabrication of Li Ion Battery Anode with Si Swarf-Graphite Sheet Composites - Dependence of Cyclability on Binder and Size of Graphite Sheets

〇Jaeyoung Choi¹, Taketoshi Matsumoto¹, Hikaru Kobayashi¹ (1.ISIR, Osaka Univ.)

9:30 AM - 11:30 AM

[21a-PA2-30] Fabrication and electrochemical evaluation of 5 V class cathode thin-films

〇Susumu Shiraki¹ (1.Nippon Inst. Tech.)

9:30 AM - 11:30 AM

[21a-PA2-31] Fabrication and Investigation of Amorphous Solid-State Electrolyte Film for InGaZnO Transistors with Electric Double Layer

〇Kohei Fujimoto¹, Tetsuya Asano¹, Mami Fujii¹, Juan Paolo Bermundo¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹, Hideaki Adachi¹ (1.NAIST)

Authentication

Password authentication.
Password is required to view the PDF. Please enter a password to authenticate.

The password has been sent to pre-registrants.
For onsite registrants, please refer to the back of the name badge.
The password will be sent to all JSAP members in March 2020.

Please log in with your participant account.
» Participant Log In

▲

Session information

[21a-PA2-1~31] 6.3 Oxide electronics

▲ [21a-PA2-3] Film thickness variation mediated interfacial strain crossover in epitaxial VO2 films

△ [21a-PA2-9] Structural characterization of WO3 films grown by MBE on a LSAT substrate

▲ [21a-PA2-28] Recombination Mechanism in BiVO4 Photocatalyst Studied by Photoluminescence

Authentication

▲ [21a-PA2-3] Film thickness variation mediated interfacial strain crossover in epitaxial VO₂ films

△ [21a-PA2-9] Structural characterization of WO₃ films grown by MBE on a LSAT substrate