Oral presentation

[20p-E317-1~9] 9.3 Nanoelectronics

Fri. Sep 20, 2019 1:30 PM - 4:00 PM E317 (E317)

Yasuhisa Naitoh(AIST), Takahide Oya(Yokohama Natl. Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[20p-E317-1] Single Molecular Single-Electron Transistor based on Silole

〇Genki Ohkatsu¹, SeungJoo Lee¹, Ryo Shintani², Yutaka Majima¹ (1.Tokyo Tech, 2.Osaka Univ.)

1:45 PM - 2:00 PM

[20p-E317-2] Electroless Gold Plating over Palladium Thin Films

〇Meietu You¹, Ryo Toyama¹, Phan Trong Tue¹, Yutaka Majima¹ (1.Tokyo Tech)

2:00 PM - 2:15 PM

[20p-E317-3] Investigation of Deterioration of Pt Nanogap Memory Device and Influence of Electrode Under Extremely High Temperature Environment

〇Kazuki Otsu^1,3, Hiroshi Suga¹, Kazuhito Tsukagoshi², Yasuhisa Naitoh³ (1.CIT, 2.WPI-MANA NIMS, 3.AIST)

2:15 PM - 2:30 PM

[20p-E317-4] Formation method of nanoscale three-terminal structure device using electromigration during metal deposition

〇Takuya Abe^1,3, Hiroshi Suga¹, Kazuhito Tsukagoshi², Yasuhisa Naitoh³ (1.CIT, 2.WPI-MANA NIMS, 3.AIST)

2:30 PM - 2:45 PM

△ [20p-E317-5] Resistance Switching Effect in Self-organized Fullerene Nanowire

〇Yukiya Umeta^1,2, Shushu Zheng², Yasuhisa Naitohu³, Xing Lu⁴, Hiroshi Suga^1,2, Kazuhito Tsukagoshi² (1.CIT, 2.WPI-MANA NIMS, 3.AIST, 4.HUST)

3:00 PM - 3:15 PM

△ [20p-E317-6] Improved Sensitivity and Frequency Characteristics of Single-Electron Transistor Rectifier

〇(M2)Tomoki Nishimura¹, Alka Singh¹, Hironori Sugiyama¹, Hiroaki Satoh^1,2, Hiroshi Inokawa^1,2 (1.GSIST Shizuoka Univ., 2.RIE Shizuoka Univ.)

3:15 PM - 3:30 PM

[20p-E317-7] Single-electron effects observed in arrays of carbon-coated cobalt nanoparticles

〇Tomoki Yagai¹, Makoto Moribayashi¹, Masataka Moriya¹, Hiroshi Shimada¹, Ayumi Hirano-Iwata², Fumihiko Hirose³, Yoshinao Mizugaki¹ (1.UEC Tokyo, 2.Tohoku Univ., 3.Yamagata Univ.)

3:30 PM - 3:45 PM

[20p-E317-8] Explanation of pump operation in common-gate quadruple-dot device

〇Yu Kadota¹, Shigeru Imai¹ (1.Ritsumei Univ.)

3:45 PM - 4:00 PM

[20p-E317-9] periodicity of conditions for pumping operation in asymmetric common-gate triple-dot single-electoron devices

〇Shunta Sakai¹, Shigeru Imai¹ (1.ritsumei Univ.)

Poster presentation

[18a-PB2-1~4] 9.3 Nanoelectronics

Wed. Sep 18, 2019 9:30 AM - 11:30 AM PB2 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[18a-PB2-1] Design of multi-bit full adder consisting of thermal-noise-harnessing single-electron memory pair circuit

〇Risa Kaide¹, Takahide Oya¹ (1.Yokohama National Univ.)

9:30 AM - 11:30 AM

[18a-PB2-2] Study of similarity between reaction-diffusion system model and Micromagnetics

〇Hideto Yamashita¹, Koji Sekiguchi¹, Takahide Oya¹ (1.Yokohama National Univ.)

9:30 AM - 11:30 AM

[18a-PB2-3] Design of bubble-inspired information-processing single-electron circuit mimicking behavior of bubble film

〇Nobuhiko Kurata¹, Takahide Oya¹ (1.Yokohama National Univ.)

9:30 AM - 11:30 AM

[18a-PB2-4] Design of single-electron reservoir computing circuit

〇Masaki Ueno¹, Takahide Oya¹ (1.Yokohama National Univ.)

Sessions

9 Applied Materials Science » 9.3 Nanoelectronics

[20p-E317-1~9] 9.3 Nanoelectronics

[20p-E317-1] Single Molecular Single-Electron Transistor based on Silole

[20p-E317-2] Electroless Gold Plating over Palladium Thin Films

[20p-E317-3] Investigation of Deterioration of Pt Nanogap Memory Device and Influence of Electrode Under Extremely High Temperature Environment

[20p-E317-4] Formation method of nanoscale three-terminal structure device using electromigration during metal deposition

△ [20p-E317-5] Resistance Switching Effect in Self-organized Fullerene Nanowire

△ [20p-E317-6] Improved Sensitivity and Frequency Characteristics of Single-Electron Transistor Rectifier

[20p-E317-7] Single-electron effects observed in arrays of carbon-coated cobalt nanoparticles

[20p-E317-8] Explanation of pump operation in common-gate quadruple-dot device

[20p-E317-9] periodicity of conditions for pumping operation in asymmetric common-gate triple-dot single-electoron devices

[18a-PB2-1~4] 9.3 Nanoelectronics

[18a-PB2-1] Design of multi-bit full adder consisting of thermal-noise-harnessing single-electron memory pair circuit

[18a-PB2-2] Study of similarity between reaction-diffusion system model and Micromagnetics

[18a-PB2-3] Design of bubble-inspired information-processing single-electron circuit mimicking behavior of bubble film

[18a-PB2-4] Design of single-electron reservoir computing circuit

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