[18a-B11-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

△ [18a-B11-2] Evaluation of electrical resistance for O₂-annealed TaO_xReRAM

〇(M1C)Soshun Doko¹, Yoshiaki Ishii¹, Masahiro Moniwa¹ (1.Tokyo Univ. of Tecnology)

Keywords:wearable, non-volatile memory, ReRAM

Resistive Random Access Memory (ReRAM) attracts much attention for low power application of IoT wearable edge devices. In this study, O₂-annealing process step was inserted just after oxide-layer (TaO_x) deposition, and electrical resistance of the ReRAM was investigated as a function of the annealing temperature. The annealing reduces oxygen vacancy concentration in the oxide-layer and increases HRS resistance, while LRS resistance stays at the similar level. Consequently, a high resistance ratio (> 4 orders of magnitude) can be realized.