[18a-B31-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [18a-B31-2] First-Principles Calculation of Bonding States between Nitrogen - Group IV Dopant in Dilute GaPN alloy

〇Yuito Maki¹, Yamane Keisuke¹, Wakahara Akihiro¹ (1.Toyohashi Tech.)

Keywords:III-V-N alloy, First-Principles Calculation, Dopant

Si, Se and Te are widely used as n-type dopant for GaP-based III-V-N alloy, but usually doping those element leads to decrease in career concentration with increasing N composition. To solve this problem, we directed attention to group IV element, Ge, and experimentally confirmed the validity of Ge as a novel n-type dopant through the conductivity control of GaPN:Ge and GaAsPN:Ge. In this research, we conducted analysis of bonding state between N and Dopant in GaPN using First-Principles Calculation. As a result, we confirmed that Ge is hopeful n-type dopant in GaPN from the point of view of both experimental fact and theoretical analysis.