[18a-B31-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

▲ [18a-B31-5] Laser Induced Degradation of Photoluminescence Intensity in GaPN

〇(D)Md Zamil Sultan^1,2, Akinori Shiroma¹, Shuhei Yagi¹, Kengo Takamiya¹, Hiroyuki Yaguchi¹ (1.Saitama University, 2.Hajee Mohammad Danesh Science and Technology University)

Keywords:Photoluminescence degradation, Defects, Laser irradiation

The evolution of the photoluminescence intensity from GaPN has been studied extensively due to laser irradiation at room temperature. Stronger laser irradiation was found to lead to larger and faster decrease in the PL intensity. With reducing laser power density, the PL intensity degraded less and more slowly. The degradation of the PL intensity was found to become smaller with increasing nitrogen concentration in GaPN. We confirmed from PL mapping that the degradation of the PL intensity induced by laser irradiation is an irreversible change. The way proposed in this study would be very useful to evaluate potential defect generation which causes the deterioration of optoelectronic device during the operation.