[18a-B31-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18a-B31-6] Electrical characterization of InGaAs:N δ-doped superlattices

〇Ryuji Yoneno¹, Naoya Miyashita², Yoshitaka Okada², Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1.Saitama Univ., 2.RCAST, The Univ. of Tokyo)

Keywords:intermediate band solar cells, superlattices, InGaAsN

Group III-V nitride alloys are expected as absorber materials for intermediate band solar cells (IBSC) because they have a unique band structure that forms conduction band subbands called E + and E-. Therefore, an InGaAs: N δ-doped superlattice (SL) lattice-matched to a GaAs substrate was grown. The SL structure was grown by repeating the growth of 6 nm In_0.03Ga_0.97As and nitrogen plasma irradiation during the growth interruption. The prepared sample was subjected to a thermal annealing, and then the electron concentration and mobility were calculated by Hall measurement, and changes due to thermal annealing and structure were considered.