The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18a-B31-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 18, 2019 9:00 AM - 11:30 AM B31 (B31)

Hiroyuki Yaguchi(Saitama Univ.), Yoriko Tominaga(Hiroshima Univ.)

10:30 AM - 10:45 AM

[18a-B31-6] Electrical characterization of InGaAs:N δ-doped superlattices

Ryuji Yoneno1, Naoya Miyashita2, Yoshitaka Okada2, Shuhei Yagi1, Hiroyuki Yaguchi1 (1.Saitama Univ., 2.RCAST, The Univ. of Tokyo)

Keywords:intermediate band solar cells, superlattices, InGaAsN

Group III-V nitride alloys are expected as absorber materials for intermediate band solar cells (IBSC) because they have a unique band structure that forms conduction band subbands called E + and E-. Therefore, an InGaAs: N δ-doped superlattice (SL) lattice-matched to a GaAs substrate was grown. The SL structure was grown by repeating the growth of 6 nm In0.03Ga0.97As and nitrogen plasma irradiation during the growth interruption. The prepared sample was subjected to a thermal annealing, and then the electron concentration and mobility were calculated by Hall measurement, and changes due to thermal annealing and structure were considered.