[18a-C212-1~11] 15.7 Crystal characterization, impurities and crystal defects

[18a-C212-1] Quality of silicon substrate and point defects (2) From Precipitate Engineering to Point Defect Engineering

〇Naohisa Inoue^1,2 (1.Tokyo U. Agri. & Technol., 2.Osaka Pref. U.)

Keywords:silicon crystal, point defect, control

60 years history of silicon crystal was analyzed by the defect engineering. In the LSI period from 1975, precipitate engineering was developed. In the SOC period from 1995, microdefect engineering played an important role. In the power device period from 2005, CiOi complex engineering led the development. Point defect engineering, based on the above techniques, will guide the future devices.