[18a-C212-1~11] 15.7 Crystal characterization, impurities and crystal defects

[18a-C212-4] On the Interpretation of the Formation Volume of Defects in Crystal Growth

〇Koun Shirai¹ (1.ISIR, Osaka Univ.)

Keywords:defect, crystal growth, formation volume

In the study of crystal growth of silicon, a theoretical proposal for the effect of stress on the formation of intrinsic defects was made. According to the model, vacancies are prevailed for compressing stress, while interstitials are prevailed for tensile stress. Recently, this model has been supported by an experiment. However, there is a fundamental problem in the assumption of this model. We point out the problem behind this assumption.