[18a-C212-1~11] 15.7 Crystal characterization, impurities and crystal defects

[18a-C212-3] Measurement of carbon concentration in silicon crystal
(XIX) 2nd generation infrared absorption standard measurement procedure

〇Naohisa Inoue^1,2, Shuichi Okuda², Shuichi Kawamata² (1.Tokyo U. Agri. & Technol., 2.Osaka Pref. U.)

Keywords:CZ Silicon crystal, carbon concentration measurement, infrared absorption

Standard measurement procedure for the infrared absorption measurement of low concentration carbon was established, both for single and poly crystals, and detection limit 1x10¹³ and quantification limit 1x10¹⁴ atoms/cm³. Te procedure consists of (1) preparation of synthetic reference sample, (2) aquizition of absorption spectra from both measurement and reference samples, (3) processing of differential absorption spectrum, (i) long (573-618-637 cm^-1 three point) and short (592-618 cm^-1) baselines (ii) deletion of unwanted phonon fractional absorption at 600, 608 and 612 cm^-1. (4) determination of carbon peak absorbance.