Naohisa Inoue

→ Search for Naohisa Inoue in Google Scholar

Speaker, Author, Co-Author

Wed. Sep 18, 2019 9:00 AM - 12:00 PM C212 (C212)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[18a-C212-1~11] 15.7 Crystal characterization, impurities and crystal defects

9:00 AM - 9:15 AM

[18a-C212-1] Quality of silicon substrate and point defects (2) From Precipitate Engineering to Point Defect Engineering

〇Naohisa Inoue^1,2 (1.Tokyo U. Agri. & Technol., 2.Osaka Pref. U.)

9:15 AM - 9:30 AM

[18a-C212-2] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (15) Annealing behavior of NO shallow thermal donors

〇Naohisa Inoue^1,2, Shuichi Okuda², Shuichi Kawamata² (1.Tokyo U. Agri. & Technol., 2.Osaka Pref. U.)

9:30 AM - 9:45 AM

[18a-C212-3] Measurement of carbon concentration in silicon crystal
(XIX) 2nd generation infrared absorption standard measurement procedure

〇Naohisa Inoue^1,2, Shuichi Okuda², Shuichi Kawamata² (1.Tokyo U. Agri. & Technol., 2.Osaka Pref. U.)