The 80th JSAP Autumn Meeting 2019

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15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18a-C212-1~11] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 18, 2019 9:00 AM - 12:00 PM C212 (C212)

Naoki Fukata(NIMS), Kazuhisa Torigoe(SUMCO), Wataru Sugimura(SUMCO Corporation)

10:30 AM - 10:45 AM

[18a-C212-6] Formation of vacancy and oxygen complexes in Si wafers by ultra-high temperature RTP

〇Haruo Sudo1,2, Koji Sueoka3 (1.GlobalWafers Japan, 2.Graduate School of Computer Science and Systems Eng., Okayama Pref. Univ., 3.Faculty of Computer Science and Systems Eng., Okayama Pref. Univ.)

Keywords:silicon, Rapid Thermal Process, Point defects