[18a-C309-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18a-C309-5] [INVITED] Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

〇Akiko Hirata¹, Masanaga Fukasawa¹, Kazunori Nagahata², Hu Li³, Kazuhiro Karahashi⁴, Satoshi Hamaguchi⁴, Tetsuya Tatsumi¹ (1.Sony Semiconductor Solutions Corporation, 2.Sony Semiconductor Manufacturing Corporation, 3.Tokyo Electron, 4.Osaka Univ.)

Keywords:JSAP Paper Award Speech