[18a-E216-1~10] 10.4 Semiconductor spintronics, superconductor, multiferroics

▲ [18a-E216-8] Electron spin lifetime and momentum lifetime in Si two-dimensional accumulation channels: Demonstration of spin MOSFETs at room temperature

Shoichi Sato¹, Mitsuki Ichihara¹, Masaaki Tanaka^1,2, 〇Ryosho Nakane^1,3 (1.Univ. of Tokyo, EEIS, 2.Univ. of Tokyo, Spintronics, 3.Univ. of Tokyo, IIIEE)

Keywords:Si 2-dimensional channel, electron momentum and spin lifetimes, spin MOSFETs

We have experimentally investigated the relation between the electron spin lifetime and momentum lifetime at room temperature in a 2-dimensional accumulation channel of Schottky-barrier spin metal-oxide-semiconductor field-effect transistors.