Throughput improvement of Non-Destructive Surface States Density Measurement<br />by Pulse Photoconductivity Method

Narumi Abe; Yuuki Kumagae; Hiroki Obana; Takuma Yamashita; Ryou Ogasawara; tatuki Hamada; Ryou Yoshii; Hiroshi Kubota; Takeshi Hashishin; Masao Yoshioka

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18a-E303-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Sep 18, 2019 9:00 AM - 12:15 PM E303 (E303)

Koichiro Saga(Sony), Takashi Hasunuma(Univ. of Tsukuba)

11:00 AM - 11:15 AM

[18a-E303-8] Throughput improvement of Non-Destructive Surface States Density Measurement
by Pulse Photoconductivity Method

〇Narumi Abe¹, Yuuki Kumagae¹, Hiroki Obana¹, Takuma Yamashita¹, Ryou Ogasawara², tatuki Hamada², Ryou Yoshii², Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.GSST Kumamoto Univ., 2.Kumamoto Univ.)

Keywords:Pulse Photoconductivity Method

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Presentation information

[18a-E303-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18a-E303-8] Throughput improvement of Non-Destructive Surface States Density Measurementby Pulse Photoconductivity Method

[18a-E303-8] Throughput improvement of Non-Destructive Surface States Density Measurement
by Pulse Photoconductivity Method