Effect of a-Si Film Thickness on the (100) texture in the CW Laser Crystallizaion on Glass Substrate

Nobuo Sasaki; Arif Muhammad; Yukiharu Uraoka; Jun Gotoh; Shigeto Sugimoto

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[18a-E304-1~9] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Wed. Sep 18, 2019 9:30 AM - 11:45 AM E304 (E304)

Seiichiro Higashi(Hiroshima Univ.), Tatsuya Okada(Univ. of the Ryukyus)

9:30 AM - 9:45 AM

[18a-E304-1] Effect of a-Si Film Thickness on the (100) texture in the CW Laser Crystallizaion on Glass Substrate

〇Nobuo Sasaki^1,2,3, Arif Muhammad², Yukiharu Uraoka², Jun Gotoh³, Shigeto Sugimoto³ (1.Sasaki Consulting, 2.NAIST, 3.V-technology)

Keywords:laser anneal, CW laser, surface crystal orientation

The (100) CW laser crystallization technology is applied to the a-Si film on glass substrate, and the effect of the a-Si film thickness on the (100) surface control is investigated.