[18a-E310-1~10] 15.4 III-V-group nitride crystals

[18a-E310-10] High quality AlN growth by ammonia-free high-temperature MOVPE

〇Xu-Qiang Shen¹, Kazutoshi Kojima¹, Hajime Okumura¹ (1.AIST)

Keywords:Nitrides

We have developed a new growth technique, named ammonia-free high-temperature MOVPE (AFHT MOVPE). This time, we report the growth results of high quality AlN epilayer by use of the growth technique.