Characterization of UV-B AlGaN active layer on n-Al<sub>0.6</sub>Ga<sub>0.4</sub>N underlying layer with low dislocation density

Shunya Tanaka; Yuta Kawase; Kosuke Sato; Shinji Yasue; Shohei Teramura; Sho Iwayama; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki; Hideto Miyake

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-E310-1~10] 15.4 III-V-group nitride crystals

Wed. Sep 18, 2019 9:00 AM - 11:45 AM E310 (E310)

Mitsuru Funato(Kyoto Univ.), Yoshiki Saito(TS Opto)

9:15 AM - 9:30 AM

△ [18a-E310-2] Characterization of UV-B AlGaN active layer on n-Al_0.6Ga_0.4N underlying layer with low dislocation density

〇(M1)Shunya Tanaka¹, Yuta Kawase¹, Kosuke Sato^1,2, Shinji Yasue¹, Shohei Teramura¹, Sho Iwayama^1,4, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,3, Hideto Miyake⁴ (1.Fac. Sci & Tec., Meijo Univ., 2.Asahi-Kasei Corp., 3.Akasaki Research Center, Nagoya Univ., 4.Graduate School of Regional Innovation Studies, Mie Univ.)

Keywords:semiconductor, UV-B, AlGaN

Presentation information

[18a-E310-1~10] 15.4 III-V-group nitride crystals

△ [18a-E310-2] Characterization of UV-B AlGaN active layer on n-Al0.6Ga0.4N underlying layer with low dislocation density

△ [18a-E310-2] Characterization of UV-B AlGaN active layer on n-Al_0.6Ga_0.4N underlying layer with low dislocation density