High current operation of UV-B devices fabricated on low dislocation and relaxed AlGaN

Shinji Yasue; Kosuke Sato; Yusuke Sakuragi; Yuya Ogino; Syunya Tanaka; Shohei Teramura; Sho Iwayama; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki; Hideto Miyake

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-E310-1~10] 15.4 III-V-group nitride crystals

Wed. Sep 18, 2019 9:00 AM - 11:45 AM E310 (E310)

Mitsuru Funato(Kyoto Univ.), Yoshiki Saito(TS Opto)

9:30 AM - 9:45 AM

△ [18a-E310-3] High current operation of UV-B devices fabricated on low dislocation and relaxed AlGaN

〇Shinji Yasue¹, Kosuke Sato^1,2, Yusuke Sakuragi¹, Yuya Ogino¹, Syunya Tanaka¹, Shohei Teramura¹, Sho Iwayama^1,4, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,3, Hideto Miyake⁴ (1.Meijo Univ., 2.Asahi-Kasei Co., 3.Akasaki Res. C., Nagoya Univ., 4.Grad. Sch. of Reg. Innov. Stu., Mie Univ.)

Keywords:UV, AlGaN