[18a-E311-1~9] 6.3 Oxide electronics

[18a-E311-5] Nonthermal crystal bridging of ZnO nanoparticles by nonequilibrium excitation reaction of electrons and plasma

〇Norihiro Shimoi¹, Shun-Ichiro Tanaka¹ (1.Tohoku Univ.)

Keywords:nonequilibrium excitation reaction, zinc oxide

Conductive ceramic films, such as zinc oxide (ZnO) thin film, will likely be utilized as core semiconducting materials for applications for the Internet of Things (IoT). This study focussed on a nonequilibrium excitation reaction field as a bottom-up architecture and successfully found the basis for a technology using a plasma atmosphere and a planar homogeneous electron beam as a nonequilibrium reaction field. The ZnO thin film obtained in this study exhibited a high Hall mobility of 128.3 cm²/Vs even though it was formed on a PET film substrate at room temperature. This achievement contributes toward clarifying the mechanism behind the fabrication of highly functional oxide thin films by a two-dimensional simple process without using thermal treatment. Moreover, this technique will also enable the provision of elements for the next-generation nanodevices with highly functional properties using complexes of metals, ceramics, and semiconductors.