Oral presentation

[18a-E311-1~9] 6.3 Oxide electronics

Wed. Sep 18, 2019 9:00 AM - 11:30 AM E311 (E311)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[18a-E311-1] Investigation on Electric Double Layer Effect in Li⁺Ion Conducting Solid Electrolytes

〇Takashi Tsuchiya¹, Makoto Takayanagi^1,2, Masataka Imura¹, Yasuo Koide¹, Tohru Higuchi², Kazuya Terabe¹ (1.NIMS, 2.Tokyo. Univ. of Sci.)

9:15 AM - 9:30 AM

[18a-E311-2] In Situ Manipulation of Magnetic Anisotropy in Fe₃O₄ Thin Film, Archived with an All-Solid-State Redox Device

〇(D)Wataru Namiki^1,2, Takashi Tsuchiya¹, Makoto Takayanagi^1,2, Tohru Higuchi², Kazuya Terabe¹ (1.NIMS, 2.Tokyo Uni. of Sci.)

9:30 AM - 9:45 AM

[18a-E311-3] Structural and valence control in iron oxides
synthesized at low-temperatures and under ambient pressure

〇Daisuke Kan¹, Satoshi Sugano¹, Yoshihisa Kosugi¹, Kento Kobayashi¹, Nao Uebayashi¹, Tomoyuki Koganezawa², Yuichi Shimakawa¹ (1.ICR, Kyoto Univ., 2.JASRI/SPring-8)

9:45 AM - 10:00 AM

[18a-E311-4] Verwey transition in three dimensional Fe₃O₄ nanowire at 10 nm length scale

Rupali Rakshit¹, 〇Azusa Hattori¹, Yasuhisa Naitoh², Hisashi Shima², Hiroyuki Akinaga², Hidekazu Tanaka² (1.ISIR, Osaka Univ., 2.AIST)

10:00 AM - 10:15 AM

[18a-E311-5] Nonthermal crystal bridging of ZnO nanoparticles by nonequilibrium excitation reaction of electrons and plasma

〇Norihiro Shimoi¹, Shun-Ichiro Tanaka¹ (1.Tohoku Univ.)

10:30 AM - 10:45 AM

[18a-E311-6] Fabrication and investigation of the electronic properties of perovskite-type oxyfluoride SrCrO_3-xF_x thin films

〇Akira Chikamatsu¹, Takahiro Maruyama¹, Tsukasa Katayama¹, Yu Su², Yoshihiro Tsujimoto^2,3, Kazunari Yamaura^2,3, Miho Kitamura⁴, Koji Horiba⁴, Hiroshi Kumigashira^4,5, Tetsuya Hasegawa¹ (1.Univ. of Tokyo, 2.NIMS, 3.Hokkaido Univ., 4.KEK-PF, 5.Tohoku Univ.)

10:45 AM - 11:00 AM

[18a-E311-7] Origin of photo-induced current in strongly correlated ferroelectric YMnO₃ thin films

〇Kohei Miura¹, Junpei Tanaka¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

11:00 AM - 11:15 AM

[18a-E311-8] Temperature dependence of electrical characteristics of (La_1-xSr_x)VO₃/p-Si(100) junctions

〇Ryoichi Nemoto¹, Hiroshi Sakanaga¹, Yujun Zhang¹, Hiroki Wadati¹, Koji Arafune¹, Haruhiko Yoshida¹, Yasushi Hotta¹ (1.Univ. of Hyogo)

11:15 AM - 11:30 AM

[18a-E311-9] Observation of energy band discontinuities at (La_1-xSr_x)VO₃/p-Si(100) junctions

〇Hiroshi Sakanaga¹, Ryoichi Nemoto¹, Yujun Zhang¹, Hiroki Wadati¹, Haruhiko Yoshida¹, Koji Arafune¹, Yasushi Hotta¹ (1.Univ. of Hyogo)

Oral presentation

[18p-E311-1~18] 6.3 Oxide electronics

Wed. Sep 18, 2019 1:15 PM - 6:00 PM E311 (E311)

Jobu Matsuno(Osaka Univ.), Azusa Hattori(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

△ [18p-E311-1] Fabrication of perovskite-type La₂FeCoO₆ artificial superlattice films

〇Yuu Takeuchi¹, Osami Sakata², Akira Ohtomo^1,3 (1.Tokyo Tech., Dept. Sci. Eng., 2.NIMS, 3.MCES)

1:30 PM - 1:45 PM

△ [18p-E311-2] Selective growth of layered rock-salt-type LiVO₂ and spinel-type LiV₂O₄ films by PLD

〇Tatsuya Yajima¹, Takuto Soma¹, Akira Ohtomo^1,2 (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.MCES)

1:45 PM - 2:00 PM

△ [18p-E311-3] Observation of Current-Dependent Metal-Insulator Transition in Ca₂RuO₄ Thin Films Grown by Solid Phase Epitaxy

〇Keiji Tsubaki¹, Atsushi Tsurumaki-Fukuchi¹, Takayoshi Katase², Toshio Kamiya², Masashi Arita¹, Yasuo Takahashi¹ (1.Graduate School of IST, Hokkaido Univ., 2.MSL, Tokyo Tech.)

2:00 PM - 2:15 PM

▼ [18p-E311-4] Electrical Transport and Magnetic Properties of LuFe₂O₄ Epitaxial Thin Films

〇(D)YouJin Kim¹, Shinya Konishi¹, Yuichiro Hayasaka², Itsuhiro Kakeya³, Katsuhisa Tanaka¹ (1.Department of Material Chemistry, Graduate School of Engineering, Kyoto Univ., 2.The Electronic Microscopy Center, Tohoku Univ., 3.Departement of Electronic Science and Engineering, Graduate School of Engineering ,Kyoto Univ.)

2:15 PM - 2:30 PM

△ [18p-E311-5] p-type electrical conduction of CeO epitaxial thin film

〇Nobuto Abe¹, Taku Yamamoto¹, Daichi Saito¹, Kenichi Kaminaga², Daichi Oka¹, Tomoteru Fukumura^1,2,3,4 (1.Tohoku Univ., 2.WPI-AIMR, 3.CSIS, 4.CSRN)

2:30 PM - 2:45 PM

△ [18p-E311-6] Negative magnetoresistance of EuNbO_3-xN_x thin films

〇Takahiro Maruyama¹, Akira Chikamatsu¹, Yasushi Hirose¹, Tukasa Katayama¹, Tetsuya Hasegawa¹ (1.Univ. of Tokyo)

2:45 PM - 3:00 PM

△ [18p-E311-7] New high-T_C ferromagnetic semiconductor: rare-earth monoxide GdO

〇(M2)Taku Yamamoto¹, Kenichi Kaminaga², Daichi Saito¹, Daichi Oka¹, Tomoteru Fukumura^1,2,3 (1.Tohoku Univ., 2.WPI-AIMR & Core Research Cluster, Tohoku Univ., 3.CSIS CSRN, Tohoku Univ.)

3:00 PM - 3:15 PM

△ [18p-E311-8] Spin current detection at epitaxial oxide interfaces

〇(M2)Masaki Terabayashi¹, Shinichiro seki^2,3, Rina Takagi^2,3, Masao Nakamura², Masashi Kawasaki^2,3, Koji Ishibashi², Tomohiko Saitoh¹, Jobu Matsuno^2,4,5 (1.Tokyo Univ. of Sci., 2.RIKEN CEMS, 3.Univ. of Tokyo., 4.Osaka Univ., 5.JST PRESTO)

3:30 PM - 3:45 PM

[18p-E311-9] Spin Hall magnetoresistance in LaO/EuO heteroepitaxial thin film

〇Kenichi Kaminaga¹, Daichi Oka², HIrofumi Oka¹, Tomoteru Fukumura^1,2,3,4 (1.WPI-AIMR, 2.Tohoku Univ., 3.CSIS, 4.CSRN)

3:45 PM - 4:00 PM

[18p-E311-10] Dependence of resistance jumps on the electrode gap distance in VO₂ grown on hexagonal boron nitride

〇Shingo Genchi¹, Mahito Yamamoto¹, Teruo Kanki¹, Kenji Watanabe², Takashi Taniguchi², Hidekazu Tanaka¹ (1.Osaka University, 2.NIMS)

4:00 PM - 4:15 PM

[18p-E311-11] Evaluation of the work function of VO₂ thin films using VO₂/TiO₂:Nb heterojunctions

〇Yuji Muraoka¹, Yuki Suga², Takanori Wakita¹, Takayoshi Yokoya¹ (1.Okayama Univ., RIIS, 2.Okayama Univ. GS)

4:15 PM - 4:30 PM

[18p-E311-12] Impact of scaling down the VO₂ Mott transistor below material correlation length

〇Takeaki Yajima^1,2, Yusuke Samata¹, Tomonori Nishimura¹, Takahisa Tanaka¹, Ken Uchida¹, Akira Toriumi¹ (1.Univ. of Tokyo, 2.JST PRESTO)

4:30 PM - 4:45 PM

[18p-E311-13] Single band two-dimensional hole superconductivity in transparent Li_1−xNbO₂ epitaxial films

〇(D)Takuto Soma¹, Kohei Yoshimatsu¹, Koji Horiba^2,3, Hiroshi Kumigashira^2,3, Akira Ohtomo^1,3 (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.KEK-PF, 3.MCES)

4:45 PM - 5:00 PM

[18p-E311-14] Flexoelectricity and ferrimagnetism in strain-gradient rare-earth iron garnet thin films

〇Hiroyasu Yamahara¹, Sarker Md. Shamim¹, Munetoshi Seki¹, Yasuo Cho², Hitoshi Tabata¹ (1.Univ. Tokyo, 2.RIEC Tohoku Univ.)

5:00 PM - 5:15 PM

[18p-E311-15] Capping layer effect on conductivity at SrTiO₃ interfaces

〇Jiyeon N Lee¹, Mikk Lippmaa¹ (1.ISSP, Univ. of Tokyo)

5:15 PM - 5:30 PM

[18p-E311-16] Strain effect on electrical properties of nanoelectronic phase in NdNiO₃nanowires

〇Takashi Yamanaka¹, Azusa Hattori¹, Hidekazu Tanaka¹ (1.ISIR, Osaka Univ.)

5:30 PM - 5:45 PM

[18p-E311-17] Preparation of YbFe₂O₄/Fe₃O₄ Multilayers Grown by Pulsed Laser Deposition Method

Kyoya Hiraoka¹, Takehiro Teraji¹, Takuya Okamoto¹, Syunpei Yamada¹, 〇Nobuyuki Iwata¹ (1.CST, Nihon Univ.)

5:45 PM - 6:00 PM

[18p-E311-18] Influence of Oxidation Degree of CaFeO_x and LaFeO₃ Thickness on Magnetic Property of LaFeO₃/CaFeO_x Superlattices and Multilayers

Takuya Okamoto¹, Kyoya Hiraoka¹, Takehiro Teraji¹, Kodai Sakamoto¹, 〇Nobuyuki Iwata¹ (1.CST, Nihon Univ.)

Oral presentation

[19a-E311-1~8] 6.3 Oxide electronics

Thu. Sep 19, 2019 9:30 AM - 11:45 AM E311 (E311)

Yasuo Nara(兵庫県立大学)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

△ [19a-E311-1] Reversible insulator-to-metal transition in YO_xH_y epitaxial thin films by UV-laser irradiation

〇(M2)Yuya Komatsu¹, Ryota Shimizu^1,2, Kazunori Nishio¹, Masahiro Miyauxhi¹, Wilde Markus³, Katsuyuki Fukutani³, Taro Hitosugi¹ (1.Tokyo Tech, 2.JST-PRESTO, 3.U Tokyo)

9:45 AM - 10:00 AM

△ [19a-E311-2] Control of conductivity of metal oxide films by modulation of oxygen defects and carrier density using Nanogap-IL-FET structure

〇Takahiro Sakai¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci.)

10:00 AM - 10:15 AM

[19a-E311-3] Threshold selector operation brought about by CoO/ITO double layer structures

〇Shuhei Saitoh¹, kentaro kinoshita¹ (1.Tokyo Univ. of sci)

10:15 AM - 10:30 AM

[19a-E311-4] PDA effect on analog behavior of HfO₂ charge trap memory

〇Taiho Yoshinaka¹, Hisato Onishi¹, Yasuo Nara¹ (1.Univ. of Hyogo)

10:45 AM - 11:00 AM

△ [19a-E311-5] Optical properties and dielectric constants of amorphous MoO_3-x and W_yMo_1-yO_3-x films

〇(M1)Shota Chomei¹, Risa Tatewaki¹, Junjun Jia², Makoto Kashiwagi¹, Yuzo Shigesato¹ (1.Aoyama Gakuin Univ., 2.Waseda Univ.)

11:00 AM - 11:15 AM

▲ [19a-E311-6] Highly reversible Li-ion (de)intercalation to metastable β-MoO₃

〇(M1)Shuxin Zhang¹, Takuto Soma¹, Tatsuya Yajima¹, Akira Ohtomo^1,2 (1.Tokyo Tech., 2.MCES)

11:15 AM - 11:30 AM

▲ [19a-E311-7] Fabrication of CoMnGaO₄ thin films with phase separated-structure

〇(M2)Jiaxin Chen¹, Munetoshi Seki¹, Hitoshi Tabata¹ (1.Univ. Tokyo)

11:30 AM - 11:45 AM

[19a-E311-8] Structural Analysis of Ti-doped VO2 thin films

〇Masami Kawahara¹, Takashi Uchida², Nhu Hai Van², Yuhi Fujishiro², Shizuka Takahashi¹, Tsuyoshi Samura¹, Takashi Tachiki² (1.Kojundo Chemical Lab, 2.National Defense Aca)

Oral presentation

[19p-E311-1~14] 6.3 Oxide electronics

Thu. Sep 19, 2019 1:15 PM - 5:00 PM E311 (E311)

Hisashi Shima(AIST), Tohru Tsuruoka(NIMS)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[19p-E311-1] High Speed Resistive Switching of Conducting-Bridge RAM with Ionic Liquid Memory Layer

〇hiroshi sato^1,2, kentaro kinosita¹, yusei honma², hisashi shima², yasuhisa naito², hiroyuki akinaga², toshiyuki itoh³ (1.Tokyo Univ. of Science, 2.AIST, 3.Tottori Univ.)

1:30 PM - 1:45 PM

[19p-E311-2] Elucidation of Formation Mechanism of Nano-Point-Contact in Conductive-Bridge Random Access Memory

〇Shinji Fukumoto¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of sci.)

1:45 PM - 2:00 PM

△ [19p-E311-3] The Electrochemical impedance analysis of electrochemical parameter changes with CBRAM resistive switching

〇Shotaro Kawanami¹, Akito Igarashi¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci.)

2:00 PM - 2:15 PM

△ [19p-E311-4] Investigation on the Sulfide Based Atomic Switches with PCS

〇(D)Akira Aiba¹, Ryota Koizumi¹, Satoshi Kaneko¹, Manabu Kiguchi¹ (1.Tokyo Tech)

2:15 PM - 2:30 PM

[19p-E311-5] Operando observation of resistive switching in ReRAM by laser-excited photoemission electron microscope

〇(M2)Yuji Okuda^1,2,3, Junpei Kawakita^2,3, Toshiyuki Taniuchi^2,3, Hisashi Shima^2,4, Atsushi Shimizu^1,4, Yasuhisa Naitoh^2,4, Kentaro Kinosita¹, Hiro Akinaga^2,4, Shink Shin^2,3 (1.Tokyo Univ. of Sci., 2.AIST-UTokyo OIL, 3.ISSP Univ. Tokyo, 4.NeRI-AIST)

2:30 PM - 2:45 PM

△ [19p-E311-6] Analog resistive switching between two types of bipolar resistive switching in Pt/TaO_x/Ta₂O₅/Pt cells

〇(M2)Toshiki Miyatani¹, Yusuke Nishi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

2:45 PM - 3:00 PM

△ [19p-E311-7] Crystallinity of transition metal oxides on Pt or TiN bottom electrodes and resistive switching characteristics

〇Kazutaka Yamada¹, Yusuke Nishi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

3:00 PM - 3:15 PM

△ [19p-E311-8] Analyses of interface-type resistive switching phenomena in Ti/Pr_{0.7}Ca_{0.3}MnO_x/Pt cells

〇Naoki Kanegami¹, Yusuke Nishi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

3:30 PM - 3:45 PM

△ [19p-E311-9] The method of evaluating gas barrier performances using ITO, IZO and AZO films

〇(M1)Keisuke Tsushima¹, Makoto Kashiwagi¹, Junjun Jia², Daisuke Ono³, Shigeki Matsunaka³, Yuzo Shigesato¹ (1.Aoyama Gakuin Univ., 2.Waseda Univ., 3.Shibaura Mechatronics)

3:45 PM - 4:00 PM

▲ [19p-E311-10] Persistent Photoconductive Characteristic of ZnO Polycrystalline films

〇(D)Suchada Worasawat^1,2, Yoichiro Neo², Yoshinori Hatanaka², Wisanu Pecharapa³, Hidenori Mimura² (1.GSST, Shizuoka Univ., 2.RIE, Shizuoka Univ., 3.College of Nanotechology, KMITL)

4:00 PM - 4:15 PM

▲ [19p-E311-11] Photo-induced super-hydrophilic anatase thin film fabricated via electrospray deposition from molecular precursor solution onto a quartz glass substrate

〇(D)Natangue Heita Shafudah¹, Hiroki Nagai², Yukihiro Kudoh³, Taiju Takahashi⁴, Mitsunobu Sato⁵ (1.Appl Chem Chem Eng, 2.Appl Phys, 3.Infor and commu Eng, 4.Inform and commu Eng, 5.Apply Phys)

4:15 PM - 4:30 PM

▲ [19p-E311-12] Electron and heat transports of oxygen deficient WO_x (2.83 < x < 3) epitaxial films

〇(DC)GOWOON KIM¹, Hai Jun Cho¹, Bin Feng², Yuichi Ikuhara², Hiromichi Ohta¹ (1.Hokkaido Univ., 2.Univ. Tokyo)

4:30 PM - 4:45 PM

[19p-E311-13] Atomic layer deposition of high purity Ga₂O₃ thin films using liquid precursor (GaCp *)

〇Fumikazu Mizutani¹, Shintaro Higashi¹, Mari Inoue², Toshihide Nabatame² (1.Kojundo Chem. Lab., 2.NIMS)

4:45 PM - 5:00 PM

[19p-E311-14] Mg(OH)₂ thin films fabricated by drop-dry deposition

〇(M1)Tong Li¹, Masaya Ichimura¹ (1.Nagoya Inst. of Tech.)

Oral presentation

[21p-N302-1~10] 6.3 Oxide electronics

Sat. Sep 21, 2019 1:15 PM - 4:00 PM N302 (N302)

Hisashi Shima(AIST), Kei Noda(Keio Univ.), Kentaro Kinoshita(Tokyo Univ. of Sci.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[21p-N302-1] Gas phase photocatalytic H₂ production over hematite nanotube arrays/Cu₂O composite under visible light irradiation

〇(D)Hikaru Masegi¹, Shivaji B. Sadale², Kei Noda¹ (1.Keio Univ., 2.Shivaji Univ.)

1:30 PM - 1:45 PM

▲ [21p-N302-2] Peering into Carrier Transport Mechanism of Anatase/Rutile Core/Shell TiO₂ NFs Photocatalysts by Photo-Kelvin Probe Force Microscopy

〇YinHsuan Chang¹, Kai-Chi Hsiao¹, Krisztian Kordas², Ming-Chung Wu¹ (1.Chang Gung Univ., 2.University of Oulu)

1:45 PM - 2:00 PM

[21p-N302-3] Photo-deposition of CoO_x on facet-controlled CaTaO₂N thin film and its influence on photoelectrochemical activity

〇Takuto Wakasugi¹, Yasushi Hirose¹, Hiromu Kumagai², Kazuhiko Maeda², Tetsuya Hasegawa¹ (1.Univ. of Tokyo, 2.Tokyo Tech)

2:00 PM - 2:15 PM

[21p-N302-4] Fabrication of Cu-doped p-Fe-O / n-Fe-O thin film solar cell by electrochemical deposition

〇(M1)Ryohei Takayanagi¹, Masaya Ichimura¹, Satoshi Kobayashi¹ (1.Nagoya Inst. of technology)

2:15 PM - 2:30 PM

[21p-N302-5] Fabrication of ZnO/Co₃O₄ Heterojunction by Electrochemical Deposition

〇(M1)Yuzuki Tomita¹, Masaya Ichimura¹ (1.Nagoya Inst. of Tech.)

2:45 PM - 3:00 PM

[21p-N302-6] Atomic Layer Depostion of a Magnesium Phosphate Solid Electrolyte Film

〇Tohru Tsuruoka¹, Jin Su¹, Takuji Tsujita², Yu Nishitani², Tomofumi Hamamura², Yuu Inatomi², Kensuke Nakura², Kazuya Terabe¹ (1.NIMS, 2.Panasonic Ltd.)

3:00 PM - 3:15 PM

△ [21p-N302-7] Synthesis and fast H⁻ conduction of new lanthanum oxyhydride LaH_3−2xO_x

〇(D)Keiga Fukui¹, Soshi Iimura¹, Tomofumi Tada¹, Satoru Fujitsu¹, Masato Sasase¹, Hiromu Tamatsukuri², Takashi Honda², Kazutaka Ikeda², Toshiya Otomo², Hideo Hosono¹ (1.Tokyo Tech., 2.KEK)

3:15 PM - 3:30 PM

△ [21p-N302-8] Battery performances of thin film Li batteries using rutile Nb-doped TiO₂ epitaxial thin films: Crystal-orientation dependence

〇(M1)Daisuke Imazeki¹, Christopher van Gils³, Kazunori Nishio¹, Ryota Shimizu^1,2, Taro Hitosugi¹ (1.Tokyo Tech, 2.JST-PRESTO, 3.University of Twente)

3:30 PM - 3:45 PM

[21p-N302-9] Insertion of ultrathin LaAlO₃ layers reduces the resistances
at the LiNi_0.5Mn_1.5O₄ cathode and Nb:SrTiO₃ current collector interfaces

〇Kazunori Nishio¹, Daisuke Imazeki¹, Ryota Shimizu^1,2, Taro Hitosugi¹ (1.Tokyo Tech., 2.JST PREST)

3:45 PM - 4:00 PM

[21p-N302-10] Visualization of Ionic Space Charge Layer Formed at Metal/Li-Ion-Conductive-Solid-Electrolyte Interface

〇KAZUO YAMAMOTO¹ (1.JFCC)

Poster presentation

[21a-PA2-1~31] 6.3 Oxide electronics

Sat. Sep 21, 2019 9:30 AM - 11:30 AM PA2 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:30 AM - 11:30 AM

[21a-PA2-1] Anisotropy control in ferromagnetic-antiferromagnetic transition of GdBaCo₂O_5.5 films

〇Tsukasa Katayama¹, Akira Chikamatsu¹, Yujun Zhang², Hiroki Wadati², Kento Magara¹, Tetsuya Hasegawa¹ (1.Univ. of Tokyo, 2.Univ. of Hyogo)

9:30 AM - 11:30 AM

[21a-PA2-2] Investigation of temperature dependence of strain effect of single crystal VO₂ wires on
flexible sheet

〇Fumiya Endo¹, Teruo Kanki¹, Luca Pellegrino², Nicola Manca³, Daniele Marre^2,3, Hidekazu Tanaka¹ (1.ISIR, Osaka Univ., 2.CNR-SPIN, 3.Genova Univ.)

9:30 AM - 11:30 AM

▲ [21a-PA2-3] Film thickness variation mediated interfacial strain crossover in epitaxial VO₂ films

〇(P)Dooyong Lee^1,2, Sehwan Song¹, Jiwoong Kim¹, Sungkyun Park¹ (1.Pusan National University, 2.Institute for Molecular Science)

9:30 AM - 11:30 AM

[21a-PA2-4] Efficiency of charge to spin current conversion at NiFe/IrO₂ interfaces

〇(M1)Naoki Moriuchi¹, Kenta Fukushima¹, Takanori Kida², Masayuki Hagiwara², Kohei Ueda¹, Jobu Matsuno¹ (1.Osaka Univ., 2.AHMF, Osaka Univ.)

9:30 AM - 11:30 AM

[21a-PA2-5] Spin current transmission at Y₃Fe₅O₁₂/IrO₂ interfaces

〇(M1)Kenta Fukushima¹, Naoki Moriuchi¹, Takanori Kida², Masayuki Hagiwara², Kohei Ueda¹, Jobu Matsuno¹ (1.Osaka Univ., 2.AHMF, Osaka Univ.)

9:30 AM - 11:30 AM

[21a-PA2-6] Composition control of YbFe₂O₄ epitaxial thin films and the effects on the electric, magnetic and optical properties

〇(M2)Jyunpei Tanaka¹, Kouhei Miura¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Prefecture Univ.)

9:30 AM - 11:30 AM

[21a-PA2-7] Fabrication of the two terminal ReNiO₃proton resistor with asymmetric electrodes and its switching property

〇Shin Nonaka¹, Sidik Umar¹, Azusa Hattori¹, Hidekazu Tanaka¹ (1.ISIR Osaka Univ.)

9:30 AM - 11:30 AM

[21a-PA2-8] The effects of bottom electrodes on the epitaxial growth of YbFe₂O₄ thin films

〇Kento Shimamoto¹, Kohei Miura¹, Junpei Tanaka¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Prefecture Univ.)

9:30 AM - 11:30 AM

△ [21a-PA2-9] Structural characterization of WO₃ films grown by MBE on a LSAT substrate

〇Ryota Nakamura¹, Mikio Mizuno¹, Kazuto Koike¹, Mitsuaki Yano¹, Katsuhiko Inaba², Shintaro Kobayashi² (1.Osaka Inst. of Tech., NMRC, 2.Rigaku Corp., X-Ray Res. Lab.)

9:30 AM - 11:30 AM

[21a-PA2-10] Surface reaction of α-Al₂O₃ single crystalline substrate with water in pressure medium under ultra-high pressure

〇(D)Yuki Sasahara¹, Koki Kanatani¹, Masayuki Matsuhisa¹, Yuji Wada¹, Ryota Shimizu^1,2, Norimasa Nishiyama³, Taro Hitosugi¹ (1.Tokyo Tech, 2.JST-PRESTO, 3.MSL)

9:30 AM - 11:30 AM

[21a-PA2-11] Thermochromic characteristic of RF sputtered VO₂ film

〇Joonam Kim^1,2, Ejiri Takuto¹, Sugiyama Mutsumi^1,2 (1.Tokyo Univ. of Sci., 2.RIST)

9:30 AM - 11:30 AM

[21a-PA2-12] Synthesis of Cu₂O Epitaxial Thin Films by Mist Chemical Vapor Deposition

〇Daichi Oka¹, Tomoteru Fukumura^1,2 (1.Tohoku Univ., 2.Tohoku Univ. AIMR & CRC)

9:30 AM - 11:30 AM

[21a-PA2-13] Role of a Substrate on nano-scale Topotactic Redox Reaction of SrFeO_3-x Thin Films

〇Yasushi Hirose¹, Shunya Tanaka¹, Tetsuya Hasegawa¹ (1.Univ. of Tokyo)

9:30 AM - 11:30 AM

[21a-PA2-14] Growth of VO₂ films on ZnO-nanorod buffered glasses and their optical properties (Ⅲ)

〇Tatsuro Hukuzumi¹, Kunio Okimura², Iwao Yamaguchi³, Tetsuo Tsuchiya³ (1.Graduate School of Engineering Tokai Univ, 2.School of Engineering Tokai Univ, 3.AIST)

9:30 AM - 11:30 AM

[21a-PA2-15] A simulation model of VO₂ layered devices and its application to coupled oscillation phenomena

〇Ryuta Tobe¹, Kunio Okimura², Md Suruz Mian² (1.Grad. Sch. Eng., Tokai Univ., 2.Sch. Eng.,Tokai Univ.)

9:30 AM - 11:30 AM

[21a-PA2-16] Neuromorphic Resistivity Modulation of Pt/Ti_0.99Sc_0.01O_2-d/Pt cross-point structure

Takeshi Fujita¹, Kinya Kawamura¹, Tsunetomo Yamada¹, Ryu Yukawa², Koji Horiba², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.KEK)

9:30 AM - 11:30 AM

[21a-PA2-17] Electronic structure and metal-insulator transition of VO₂ thin films deposited on NiO/Al₂O₃

Takehiro Imagawa¹, Junpei Oikawa¹, Tsunetomo Yamada¹, Ryu Yukawa², Koji Horiba², Hiroshi Kumigashira^2,3, 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.KEK, 3.Tohoku Univ.)

9:30 AM - 11:30 AM

[21a-PA2-18] Stable and Consecutive Multiple Resistance Change in a Molecular-gap Atomic Switch

〇(M2)Ai Kassai¹, Tsuyoshi Hasegawa¹ (1.Waseda Univ.)

9:30 AM - 11:30 AM

[21a-PA2-19] Fabrication and Comparison of Resistive Switching Device using Ta₂O₅ by Wet and Dry Process

〇(B)Hidekazu Komaki¹, Takahiko Ban¹, Shin-Ichi Yamamoto¹ (1.Ryukoku Univ.)

9:30 AM - 11:30 AM

[21a-PA2-20] Resistivity improvement of zinc oxide transparent conductive film by spin-coating method

〇Takumi Nojiri¹, Naoki Ohtani¹ (1.Doshisha Univ.)

9:30 AM - 11:30 AM

[21a-PA2-21] Examination of Zn Addition to AZO Thin Films by Magnetron Sputtering Method

〇Hidehiko Shimizu¹, Haruo Iwano¹, Takahiro Kawakami¹, Yasuo Fukushima¹, Koutaro Nagata¹ (1.Niigata Univ.)

9:30 AM - 11:30 AM

[21a-PA2-22] Effects of in-situ post-annealing for crystalline structures and electrical properties of Al-doped ZnO films on the glass substrate in magnetron sputtering

〇Toshiki Suwa¹, Tadashi Nakamura¹, Kunio Okimura¹ (1.Tokai Univ.)

9:30 AM - 11:30 AM

[21a-PA2-23] Physical property variations of NFO films with additional Fe amount

〇(M2)Masaya Hirano¹, Kaito Beppu¹, Hiroshi Morita¹ (1.Sanyo-Onoda Univ.)

9:30 AM - 11:30 AM

[21a-PA2-24] Fabrication of Cu₂O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by low-damage magnetron sputtering method

〇Hiroki Tokunaga¹, Toshihiro Miyata¹, Tadatsugu Minami¹ (1.KIT)

9:30 AM - 11:30 AM

[21a-PA2-25] Charge/discharge properties of 3-dimensional TiO₂-polyaniline cell with stacked interdigited-structure

〇(M1)Yuzo Komori¹, Kyohei Akiyoshi¹, Teruaki Nomiyama¹, Yuji Horie¹, Akira Kokeguchi² (1.Kagoshima Univ., 2.JSSJ)

9:30 AM - 11:30 AM

[21a-PA2-26] Photocatalytic decomposition of gaseous methanol over Cu₂O-loaded TiO₂ nanostructures

〇Hayato Goto¹, Hikaru Masegi¹, Kei Noda¹ (1.Keio Univ.)

9:30 AM - 11:30 AM

[21a-PA2-27] Photocharge and discharge characteristics of WO₃ nanofibers sensitized by Fe₂O₃

〇(M1C)Kazuki Taguchi¹, Takuya Matsuda¹, Taito Kumamoto¹, Teruaki Nomiyama¹, Yuji Horie¹ (1.Kagoshima Univ.)

9:30 AM - 11:30 AM

▲ [21a-PA2-28] Recombination Mechanism in BiVO4 Photocatalyst Studied by Photoluminescence

〇(D)ABDELLAOUI imane IMANE¹, Kazuya Tajima¹, Takato kawagushi², Shigeru Ikeda², Mohamed Monirul Islam¹, Takeaki Sakurai¹ (1.Tsukuba Univ, 2.Konan Univ)

9:30 AM - 11:30 AM

[21a-PA2-29] Fabrication of Li Ion Battery Anode with Si Swarf-Graphite Sheet Composites - Dependence of Cyclability on Binder and Size of Graphite Sheets

〇Jaeyoung Choi¹, Taketoshi Matsumoto¹, Hikaru Kobayashi¹ (1.ISIR, Osaka Univ.)

9:30 AM - 11:30 AM

[21a-PA2-30] Fabrication and electrochemical evaluation of 5 V class cathode thin-films

〇Susumu Shiraki¹ (1.Nippon Inst. Tech.)

9:30 AM - 11:30 AM

[21a-PA2-31] Fabrication and Investigation of Amorphous Solid-State Electrolyte Film for InGaZnO Transistors with Electric Double Layer

〇Kohei Fujimoto¹, Tetsuya Asano¹, Mami Fujii¹, Juan Paolo Bermundo¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹, Hideaki Adachi¹ (1.NAIST)

Sessions

6 Thin Films and Surfaces » 6.3 Oxide electronics

[18a-E311-1~9] 6.3 Oxide electronics

[18p-E311-1~18] 6.3 Oxide electronics

△ [18p-E311-1] Fabrication of perovskite-type La2FeCoO6 artificial superlattice films

△ [18p-E311-2] Selective growth of layered rock-salt-type LiVO2 and spinel-type LiV2O4 films by PLD

△ [18p-E311-3] Observation of Current-Dependent Metal-Insulator Transition in Ca2RuO4 Thin Films Grown by Solid Phase Epitaxy

▼ [18p-E311-4] Electrical Transport and Magnetic Properties of LuFe2O4 Epitaxial Thin Films

△ [18p-E311-5] p-type electrical conduction of CeO epitaxial thin film

△ [18p-E311-6] Negative magnetoresistance of EuNbO3-xNx thin films

△ [18p-E311-7] New high-TC ferromagnetic semiconductor: rare-earth monoxide GdO

△ [18p-E311-8] Spin current detection at epitaxial oxide interfaces

[19a-E311-1~8] 6.3 Oxide electronics

△ [19a-E311-1] Reversible insulator-to-metal transition in YOxHy epitaxial thin films by UV-laser irradiation

△ [19a-E311-2] Control of conductivity of metal oxide films by modulation of oxygen defects and carrier density using Nanogap-IL-FET structure

△ [19a-E311-5] Optical properties and dielectric constants of amorphous MoO3-x and WyMo1-yO3-x films

▲ [19a-E311-6] Highly reversible Li-ion (de)intercalation to metastable β-MoO3

▲ [19a-E311-7] Fabrication of CoMnGaO4 thin films with phase separated-structure

[19p-E311-1~14] 6.3 Oxide electronics

△ [19p-E311-3] The Electrochemical impedance analysis of electrochemical parameter changes with CBRAM resistive switching

△ [19p-E311-4] Investigation on the Sulfide Based Atomic Switches with PCS

△ [19p-E311-6] Analog resistive switching between two types of bipolar resistive switching in Pt/TaOx/Ta2O5/Pt cells

△ [19p-E311-7] Crystallinity of transition metal oxides on Pt or TiN bottom electrodes and resistive switching characteristics

△ [19p-E311-8] Analyses of interface-type resistive switching phenomena in Ti/Pr_{0.7}Ca_{0.3}MnO_x/Pt cells

△ [19p-E311-9] The method of evaluating gas barrier performances using ITO, IZO and AZO films

▲ [19p-E311-10] Persistent Photoconductive Characteristic of ZnO Polycrystalline films

▲ [19p-E311-11] Photo-induced super-hydrophilic anatase thin film fabricated via electrospray deposition from molecular precursor solution onto a quartz glass substrate

▲ [19p-E311-12] Electron and heat transports of oxygen deficient WOx (2.83 < x < 3) epitaxial films

[21p-N302-1~10] 6.3 Oxide electronics

▲ [21p-N302-2] Peering into Carrier Transport Mechanism of Anatase/Rutile Core/Shell TiO2 NFs Photocatalysts by Photo-Kelvin Probe Force Microscopy

△ [21p-N302-7] Synthesis and fast H− conduction of new lanthanum oxyhydride LaH3−2xOx

△ [21p-N302-8] Battery performances of thin film Li batteries using rutile Nb-doped TiO2 epitaxial thin films: Crystal-orientation dependence

[21a-PA2-1~31] 6.3 Oxide electronics

▲ [21a-PA2-3] Film thickness variation mediated interfacial strain crossover in epitaxial VO2 films

△ [21a-PA2-9] Structural characterization of WO3 films grown by MBE on a LSAT substrate

▲ [21a-PA2-28] Recombination Mechanism in BiVO4 Photocatalyst Studied by Photoluminescence

Authentication

△ [18p-E311-1] Fabrication of perovskite-type La₂FeCoO₆ artificial superlattice films

△ [18p-E311-2] Selective growth of layered rock-salt-type LiVO₂ and spinel-type LiV₂O₄ films by PLD

△ [18p-E311-3] Observation of Current-Dependent Metal-Insulator Transition in Ca₂RuO₄ Thin Films Grown by Solid Phase Epitaxy

▼ [18p-E311-4] Electrical Transport and Magnetic Properties of LuFe₂O₄ Epitaxial Thin Films

△ [18p-E311-6] Negative magnetoresistance of EuNbO_3-xN_x thin films

△ [18p-E311-7] New high-T_C ferromagnetic semiconductor: rare-earth monoxide GdO

△ [19a-E311-1] Reversible insulator-to-metal transition in YO_xH_y epitaxial thin films by UV-laser irradiation

△ [19a-E311-5] Optical properties and dielectric constants of amorphous MoO_3-x and W_yMo_1-yO_3-x films

▲ [19a-E311-6] Highly reversible Li-ion (de)intercalation to metastable β-MoO₃

▲ [19a-E311-7] Fabrication of CoMnGaO₄ thin films with phase separated-structure

△ [19p-E311-6] Analog resistive switching between two types of bipolar resistive switching in Pt/TaO_x/Ta₂O₅/Pt cells

▲ [19p-E311-12] Electron and heat transports of oxygen deficient WO_x (2.83 < x < 3) epitaxial films

▲ [21p-N302-2] Peering into Carrier Transport Mechanism of Anatase/Rutile Core/Shell TiO₂ NFs Photocatalysts by Photo-Kelvin Probe Force Microscopy

△ [21p-N302-7] Synthesis and fast H⁻ conduction of new lanthanum oxyhydride LaH_3−2xO_x

△ [21p-N302-8] Battery performances of thin film Li batteries using rutile Nb-doped TiO₂ epitaxial thin films: Crystal-orientation dependence

▲ [21a-PA2-3] Film thickness variation mediated interfacial strain crossover in epitaxial VO₂ films

△ [21a-PA2-9] Structural characterization of WO₃ films grown by MBE on a LSAT substrate