The 80th JSAP Autumn Meeting 2019

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Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[19p-E311-1~14] 6.3 Oxide electronics

Thu. Sep 19, 2019 1:15 PM - 5:00 PM E311 (E311)

Hisashi Shima(AIST), Tohru Tsuruoka(NIMS)

1:15 PM - 1:30 PM

[19p-E311-1] High Speed Resistive Switching of Conducting-Bridge RAM with Ionic Liquid Memory Layer

〇hiroshi sato1,2, kentaro kinosita1, yusei honma2, hisashi shima2, yasuhisa naito2, hiroyuki akinaga2, toshiyuki itoh3 (1.Tokyo Univ. of Science, 2.AIST, 3.Tottori Univ.)

Keywords:[bmim][Tf2N], CBRAM