[18a-E311-1~9] 6.3 Oxide electronics

[18a-E311-9] Observation of energy band discontinuities at (La_1-xSr_x)VO₃/p-Si(100) junctions

〇Hiroshi Sakanaga¹, Ryoichi Nemoto¹, Yujun Zhang¹, Hiroki Wadati¹, Haruhiko Yoshida¹, Koji Arafune¹, Yasushi Hotta¹ (1.Univ. of Hyogo)

Keywords:Strongly Correlated Electron System, Metal Insulator Transition, Perovskite

We have considered applying metal-insulator transition to Si devices. Therefore, when a junction of perovskite transition metal oxide (La_1-xSr_x) VO₃ / Si [LSVO (x)] showing a metal-insulator transition and Si is fabricated, the behavior of this junction device can be considered at the interface. A need has arisen to investigate valence band discontinuities for the composition x of Sr. In this study, we report the valence discontinuity of the LSVO (x) / Si interface using x-ray photoelectron spectroscopy (XPS).