[18a-PB1-1~20] 9.2 ナノ粒子・ナノワイヤ・ナノシート

▲ [18a-PB1-2] Process for Formation of Graphene Layers on Surface of Silicon Nanowires

〇(DC)Steaphan Mark Wallace^1,2、Thiyagu Subramani^1,3、Fukata Naoki^1,2 (1.NIMS、2.Univ. of Tsukuba、3.ICYS)

キーワード：Silicon, Carbon, Nanowires

A process for directly forming carbon layers with graphene properties on the passivation surface layers of silicon nanowire architectures is described. The process can quickly form these graphene films with complex and adjustable shapes conforming with the silicon nanowire substrate, without transferring, by utilizing deposited metallic catalysts which are etched in later steps. Characterization has shown a multi-layered film continuous over large sample areas. This research combines the properties of the flat graphene material with the 3-D nanoarchitectures of silicon nanowires for future study and device applications.