[18a-PB3-1~47] 15.4 III-V-group nitride crystals

[18a-PB3-13] Evaluation of nonvolatile memory characteristics using GaN/AlN resonant tunneling diodes

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

Keywords:nitride semiconductor, intersubband transition, nonvolatile memory

We are focusing on the realization of a high-speed nonvolatile memory using the intersubband transitions in GaN/AlN resonant tunneling diodes (RTDs). So far, we have realized stable nonvolatile memory operations by reducing the number of dislocations in RTDs and improving the quantum well structures. In this presentation, we report the current responses for input pulse voltages toward the elucidation of operation mechanism of nonvolatile memory using GaN/AlN RTDs.