Analysis on Al layer formed by TMAl preflow for growth of GaN on SiC

Presentation information

Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Wed. Sep 18, 2019 9:30 AM - 11:30 AM PB3 (PB)

9:30 AM - 11:30 AM

〇Yifu Zhu¹, Jianwei Wang¹, Takeshi Momose¹, Yukihiro Shimogaki¹, Momoko Deura¹ (1.Univ. of Tokyo)

Keywords:gallium nitride, TMAl preflow