The 80th JSAP Autumn Meeting 2019

Presentation information

Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-PB3-1~47] 15.4 III-V-group nitride crystals

Wed. Sep 18, 2019 9:30 AM - 11:30 AM PB3 (PB)

9:30 AM - 11:30 AM

[18a-PB3-34] Photoluminescence characterization of GaN exposed to NH3 plasma

Naoto Kumagai1,3, Hirotomo Itagaki2, Tokio Takahashi3, Jaeho Kim3,1, Hisato Ogiso2, Xue-lun Wang1,3,4, Shingo Hirose2, Hajime Sakakita3,1, Mitsuaki Shimizu1,4 (1.AIST-NU GaN-OIL, 2.AMRI, AIST, 3.ESPRIT, AIST, 4.IMaSS, Nagoya Univ.)

Keywords:GaN, Photoluminescence, plasma-induced damage