[18a-PB3-1~47] 15.4 III-V-group nitride crystals

[18a-PB3-35] Photoluminescence and Electrical Properties of GaN Devices Fabricated on Expanded Natural Graphite Sheet

〇Takashi Inoue¹, Hoshito Murakawa², Go Sajiki², Toshihiro Hosokawa¹, Akiyoshi Takeda¹, Hiroshi Okano² (1.Toyo Tanso, 2.NIT, Kagawa Col.)

Keywords:Gallium nitride, Expanded natural graphite sheet, Electrical property

Graphite sheet exhibits good thermal and electric conductivities with flexible form. One of the flexible sheet, expanded natural graphite sheet is manufactured by rolling process of expanded natural graphite powder. More than 100 m length with 1 m width continuous sheets are available. In this study, we used the sheet for substrate of GaN growth.
p-n junction devices of GaN exhibited diode-like I-V properties. The threshold voltages were strongly depended on growth temperature of GaN. We will report the effect of AlN buffer layer and growth process of GaN.