9:30 AM - 11:30 AM
[18a-PB3-9] Optimization of p-Cladding Layer for Improvement of Deep Ultraviolet Light Emitting Diode performance
Keywords:MOCVD, AlGaN, DUV-LED
This paper reports the effect of electron blocking layer (EBL) thickness and Mg concentration in p-GaN layer on DUV-LED performance. The strong droop was suppressed as the EBL thickness was varied from 35 nm to 10 nm. While, by increasing Mg concentration from 2.0 × 1019 cm-3 to 1.5 × 1020 cm-3, it was observed that breakdown current at which the diode was broken was increased from 17 mA to more than 100 mA . It was confirmed that increasing Mg concentration tended to improve the surface coverage of p-GaN. It is presumed the local electric field concentration was reduced because of the improvement of the p-GaN coverage.