[18p-B31-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-B31-7] 1.6 μm-band Emission from Metamorphic InAs Quantum Dots on GaAs Substrates

〇Wenbo Zhan¹, Satomi Ishida², Jinkwan Kwoen¹, Katsuyuki Watanabe¹, Satoshi Iwamoto^1,3, Yasuhiko Arakawa¹ (1.NanoQuine, 2.RCAST, 3.IIS, Univ. of Tokyo)

Keywords:quantum dot, metamorphic

Quantum dot lasers (QDLs) have widely studied since the concept of QD was firstly proposed in the 1980s. To meet the growing demands for optical telecommunications, InAs/GaAs QDLs with high performance at O-band have been achieved. Research on extending the emission wavelength of InAs/GaAs QDs to C- / L-band with keeping high emission efficiency now attract much attention, because of its potential to developing low-cost lasers in the ultra-long-haul optical transmission system. Here, we report 1.6 μm emission from metamorphic InAs quantum dots on GaAs substrates at room temperature.