[18p-C212-1~6] 15.7 Crystal characterization, impurities and crystal defects

[18p-C212-2] Observation of dislocations inside buffer layers of IMM single junction InGaAs solar cells by multiphoton excitation photoluminescence (II)

〇AKIO OGURA¹, Tomoyuki Tanikawa², Tatsuya Takamoto³, Ryuji Oshima⁴, Takeyoshi Sugaya⁴, Mitsuru Imaizumi¹ (1.JAXA, 2.Osaka Univ., 3.SHARP Corp., 4.AIST)

Keywords:dislocation, multiphoton excitation photoluminescence, solar cell