[18p-C212-1~6] 15.7 Crystal characterization, impurities and crystal defects

[18p-C212-1] Round-Robin Test of Photoluminescence Method after Electron Irradiation for Quantifying Low-Level Carbon in Silicon

〇Michio Tajima^1,2,3, Shuichi Samata^1,4, Satoko Nakagawa^1,5, Jun Oriyama¹, Noriyuki Ishihara^1,6 (1.JSNM, 2.ISAS/JAXA, 3.Meiji Univ., 4.SUMCO, 5.GWJ, 6.MIZUHO-IR)

Keywords:carbon impurity, round-robin test, photoluminescence

Round-robin test of the photoluminescence method after electron irradiation for quantifying low-level carbon in Si crystals has been performed with an intention of the world-wide standardization of the technique. The measurements were carried out for n-type MCZ crystals with the resistivity higher than 50 ohm-cm under the condition of the JIS standard for donor and acceptor impurity quantification. A good correlation was obtained between the relative intensity of the carbon-related line and the carbon concentration determined by SIMS, and the correlation was nearly identical for all the 10-participating organizations. This allows us to suggest that the correlation can be used as a calibration curve for determining low-level carbon in Si.