The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18p-C212-1~6] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 18, 2019 1:30 PM - 3:00 PM C212 (C212)

Takuo Sasaki(QST)

2:45 PM - 3:00 PM

[18p-C212-6] First-principles analysis on the behavior of metal atom near dopant complex in Si crystal

Hiroki Nagakura1,2, Koji Sueoka3 (1.Sony Semiconductor Manufacturing, 2.Graduate School of Okayama Pref. Univ., 3.Okayama Pref. Univ.)

Keywords:semiconductor, metal