[18p-C309-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18p-C309-12] Low-temperature Formation of High-Mobility IGZO Thin Film Transistors using Reactive Plasma Processes

Yuichi Setsuhara¹, 〇Kosuke Takenaka¹, Hiroyuki Hirayama¹, Masashi Endo¹, Giichiro Uchida², Akinori Ebe³ (1.Osaka Univ., 2.Meijo Univ., 3.EMD Corp.)

Keywords:IGZO