2019年第80回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.1 新物質・新機能創成(作製・評価技術)

[18p-E216-11~17] 10.1 新物質・新機能創成(作製・評価技術)

2019年9月18日(水) 16:15 〜 18:00 E216 (E216)

磯上 慎二 (物材機構)

17:30 〜 17:45

[18p-E216-16] Fabrication of X3Sn (X=Fe, Mn) epitaxial films and the magnetic and electronic properties

〇(M1)Akira Maeno1、Goto Yuki1、Tsujikawa Masahito3,4、Shirai Masahumi3,4,5、Yanase Takashi2、Shimada Toshihiro2、Nagahama Taro2 (1.CSE. Hokkaido Univ.、2.Eng. Hokkaido Univ.、3.RIEC. Tohoku Univ.、4.CSRN. Tohoku Univ.、5.CSIS. Tohoku Univ.)

キーワード:Kagome lattice, Fe3Sn, Mn3Sn

Transition metal - tin alloys have been paid attention as materials for spintronics devices in recent years. For example, D019 Mn3Sn which is frustrated antiferromagnetic material was reported to exhibit large anomalous Hall effect because of its Berry curvature of Weyl points. On the other hand, Fe3Sn2 and Fe3Sn were expected to show intrinsic anomalous Hall effect which is useful for Hall sensor. For the applications, high-quality epitaxial growth of these materials is indispensable, however it has not been achieved yet. In this work, we fabricated D019 type Fe3Sn and Mn3Sn epitaxial films and measured their physical properties. In addition, we compared magneto-transport properties of D019 and B2 Fe3Sn which we developed recently.