[18p-E216-1~10] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [18p-E216-4] Well width dependence of the spin relaxation time in GaAs / Al_0.3Ga_0.7As quantum wells (Ⅱ).

〇Yuki Matsuda¹、Yuichi Nakamura¹、Ryutaro Ohashi¹、Tetta Kikuchi¹、Hiroki Fujinuma¹、Satoshi Shimomura²、Atsushi Tackeuchi¹ (1.Waseda Univ.、2.Ehime Univ.)

キーワード：quantum wells, spin relaxation, pump and probe reflection measurement

In this study, we measured the spin relaxation time of GaAs / AlGaAs quantum wells with different well widths by time-resolved pump-probe reflection measurement, and investigated the change of well width dependence of the spin relaxation time at 14 - 300 K. As a result, it was found that the dependence changes from negative to positive as the increase of temperature. This indicates that the dominant spin relaxation mechanism is changed by the temperature, and it is expected that the dominant relaxation mechanism in each temperature region can be analyzed.