[18p-E303-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [18p-E303-8] Development of MOSFET model under TID effect

〇Yuta Oshima¹, Motoki Ando¹, Ryoichiro Yoshida¹, Kenji Hirakawa¹, Masayuki Iwase¹, Munehiro Ogasawara¹, Takashi Yoda¹, Noboru Ishihara¹, Hiroyuki Ito¹ (1.Tokyo Tech.)

Keywords:Total Ionizing Dose effect, MOSFET, Simulation model

Deterioration of semiconductor characteristics by radiation is a problem in radiation environment such as space and nuclear power. We are researching the radiation-hardening technology for a total ionizing dose (TID) effect. A TID effect deteriorates the characteristic of MOSFET in the environment where a large amount of radiation is irradiated for a long time. In this research, we focused on a radiation induced narrow channel effect (RINCE), a type of TID effect, caused by charge trapping to isolation oxides. And we modeled the deterioration of MOSFET characteristics by RINCE. We fit the model to the measured value of characteristic deterioration and reproduce the tendency of RINCE.