Yuta Oshima

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 1:45 PM - 4:45 PM E303 (E303)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18p-E303-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

3:45 PM - 4:00 PM

△ [18p-E303-8] Development of MOSFET model under TID effect

〇Yuta Oshima¹, Motoki Ando¹, Ryoichiro Yoshida¹, Kenji Hirakawa¹, Masayuki Iwase¹, Munehiro Ogasawara¹, Takashi Yoda¹, Noboru Ishihara¹, Hiroyuki Ito¹ (1.Tokyo Tech.)

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