The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[18p-E304-1~10] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Wed. Sep 18, 2019 1:45 PM - 4:15 PM E304 (E304)

Hiroshi Ikenoue(Kyushu Univ.), Hitoshi Habuka(Yokohama Natl. Univ.)

2:00 PM - 2:15 PM

[18p-E304-2] Reduction of boron diffusion by fluorine in pre-amorphized Si

Ryotaro Kiga1, Masashi Uematsu1, Kohei Itoh1 (1.Keio Univ.)

Keywords:diffusion, silicon, fluorine

BF2+ ion implantation is extensively utilized for B introduction. It has been revealed that presence of F reduces transient-enhanced diffusion of B in Si, while the detail of the mechanism is not fully understood yet. Previous studies suggested two mechanisms: reduction of kick-out diffusion by emission of vacancies due to the presence of F, and B immobilization due to direct interaction between F and B. We have determined that both two mechanisms coexist in the system by performing experiments utilizing Si isotope multilayers. In this work, we established a quantitative model for the reduction of B diffusion by analyzing experimental profiles using numerical calculation.