[18p-E311-1~18] 6.3 Oxide electronics

[18p-E311-10] Dependence of resistance jumps on the electrode gap distance in VO₂ grown on hexagonal boron nitride

〇Shingo Genchi¹, Mahito Yamamoto¹, Teruo Kanki¹, Kenji Watanabe², Takashi Taniguchi², Hidekazu Tanaka¹ (1.Osaka University, 2.NIMS)

Keywords:metal-insulator transition, resistance jump, hexagonal boron nitride

Vanadium oxide (VO₂) exhibits metal-insulator transition and we grew VO₂ thin films on layered hexagonal boron nitride. We studied the dependence of resistance jumps in the electrode gap distance in this research. A lot of resistance jumps were observed around the transition temperature and the order was comparable to the resistance of the insulator state. Besides, the maximum value of the resistance jumps increased as the electrode gap distance is reduced to several µm. These results open the possibility for the realization of resistance switching devices in µm scales.