[18p-E311-1~18] 6.3 Oxide electronics

[18p-E311-9] Spin Hall magnetoresistance in LaO/EuO heteroepitaxial thin film

〇Kenichi Kaminaga¹, Daichi Oka², HIrofumi Oka¹, Tomoteru Fukumura^1,2,3,4 (1.WPI-AIMR, 2.Tohoku Univ., 3.CSIS, 4.CSRN)

Keywords:spintronics, rare earth monoxide, pulsed laser deposition

In a heterojunction of a ferromagnetic insulator and an electrode with strong spin-orbit coupling, the spin current injected from the ferromagnetic insulator into the electrode at the interface can be detected as spin Hall magnetoresistance (SMR). In the previous meeting, we reported that LaO/EuO heteroepitaxial thin films were successfully synthesized. To investigate the influence of the clean interface on the detection of SMR, this time we report on the observation of SMR in LaO/EuO using a LaO thin film with a thickness less than the coherence length as the electrode.