[18p-E311-1~18] 6.3 Oxide electronics

[18p-E311-11] Evaluation of the work function of VO₂ thin films using VO₂/TiO₂:Nb heterojunctions

〇Yuji Muraoka¹, Yuki Suga², Takanori Wakita¹, Takayoshi Yokoya¹ (1.Okayama Univ., RIIS, 2.Okayama Univ. GS)

Keywords:VO2 thin film, Work function, Heterojunction

Change in the work function of VO₂ thin films across the metal-insulator transition (MIT) is investigated using VO₂/TiO₂:Nb(001) heterojunctions. In the results of temperature dependence of photovoltage emerging at the interface between VO₂ film and TiO₂:Nb substrate under ultraviolet light irradiation, the photovoltage increases with decreases temperature, and then suddenly decreases at the MIT temperature. We will explain on the basis of the band diagram in the heterojunction that the decrease in photovoltage originated from the change in the work function across the MIT in VO₂ thin films.