[18p-E311-1~18] 6.3 Oxide electronics

[18p-E311-12] Impact of scaling down the VO₂ Mott transistor below material correlation length

〇Takeaki Yajima^1,2, Yusuke Samata¹, Tomonori Nishimura¹, Takahisa Tanaka¹, Ken Uchida¹, Akira Toriumi¹ (1.Univ. of Tokyo, 2.JST PRESTO)

Keywords:metal-insulator transition, inhomogeneity, steep slope

An ideal Mott transistor would show a sharp ON/OFF switching due to the metal-insulator transition in the channel material. In practice, however, the switching becomes gradual due to the inhomogeneous transition which is inherent to the metal-insulator transition. In this study, the VO₂-channel Mott transistor is scaled down to the inhomogeneous length scale of the metal-insulator transition, and the ultra-sharp switching is obtained by electrostatic gating.