2019年第80回応用物理学会秋季学術講演会

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6 薄膜・表面 » 6.3 酸化物エレクトロニクス

[18p-E311-1~18] 6.3 酸化物エレクトロニクス

2019年9月18日(水) 13:15 〜 18:00 E311 (E311)

松野 丈夫(阪大)、服部 梓(阪大)

14:00 〜 14:15

[18p-E311-4] Electrical Transport and Magnetic Properties of LuFe2O4 Epitaxial Thin Films

〇(D)YouJin Kim1、Shinya Konishi1、Yuichiro Hayasaka2、Itsuhiro Kakeya3、Katsuhisa Tanaka1 (1.Department of Material Chemistry, Graduate School of Engineering, Kyoto Univ.、2.The Electronic Microscopy Center, Tohoku Univ.、3.Departement of Electronic Science and Engineering, Graduate School of Engineering ,Kyoto Univ.)

キーワード:hexagonal ferrite, exchange bias effect, Mott-VRH

Among the RFe2O4 <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613404606859699177400">compounds</gwmw>, structure and properties of LuFe2O4 <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613404733363500944780">have</gwmw> been <gwmw class="ginger-module-highlighter-mistake-type-3" id="gwmw-15613404733368246098750">most extensively</gwmw> explored, but most of the studies have been performed for bulk materials. In contrast, there are not so many reports on thin film forms of <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613404760658434108030">LuFe</gwmw>2O4, although the thin films are important, especially from a point of view of device applications. In the present study, we report on magnetic and electrical properties of <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613404905065512319697">LuFe</gwmw>2O4 <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613404935479536487846">thin</gwmw> films prepared by a pulsed laser deposition method. We found that hexagonal LuFeO3 <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613404998931205179696">and</gwmw> Lu2Fe3O7 <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613405106819767788306">phases</gwmw> of very thin layers were formed at the interface between the LuFe2O4 <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613405131522510063030">thin</gwmw> films and the substrate, and such a structure led to large exchange bias effect. In addition, we measured the temperature dependence of electrical resistivity and observed a change in electronic transport behavior from thermal activation scheme to 3D Mott-variable range hopping at the charge ordering temperature.