Evaluation of trap density in GaN by transient current<br />measurement upon step voltage application

Hirofumi Nishida; Takuya Hoshii; Hiroaki Kataoka; Kazuo Tsutsui; Kuniyuki Kakushima; Hitoshi Wakabayashi

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Masashi Kato(Nagoya Inst. of Tech.), Taketomo Sato(Hokkaido Univ.)

1:30 PM - 1:45 PM

[18p-N302-3] Evaluation of trap density in GaN by transient current
measurement upon step voltage application

〇Hirofumi Nishida¹, Takuya Hoshii¹, Hiroaki Kataoka¹, Kazuo Tsutsui², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech. School of Eng., 2.Tokyo Tech. IIR)

Keywords:GaN

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Presentation information

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

[18p-N302-3] Evaluation of trap density in GaN by transient currentmeasurement upon step voltage application

[18p-N302-3] Evaluation of trap density in GaN by transient current
measurement upon step voltage application