The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Masashi Kato(Nagoya Inst. of Tech.), Taketomo Sato(Hokkaido Univ.)

2:15 PM - 2:30 PM

[18p-N302-6] Mapping of photo-electrochemical etched Ni/GaN Schottky contacts
using scanning internal photoemission microscopy (Ⅱ)
--Comparison of n-type and p-type crystals--

〇(M1)Ryo Matsuda1, Fumimasa Horikiri2, Yoshinobu Narita2, Takehiro Yoshida2, Tomoyoshi Mishima3, Kenji Shiojima1 (1.Fukui Univ., 2.SCIOCS, 3.Hosei Univ.)

Keywords:GaN, scanning internal photoemission microscopy, photo-electrochemical etching

We present the experimental results on mapping characterization of selectively photo-electrochemical or ICP etched p-type and n-type GaN surfaces by using scanning internal photoemission microscopy. The photocurrent increased by 4 or 5 % in the photo-electrochemical etched regions for both n- and p-GaN. The photocurrent increased by 10 % in the ICP etched regions for n-GaN as well, but significantly decreased by 69 % for p-GaN. We confirmed that this method can clearly visualize the etching pattern as the photocurrent image.