[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

[18p-N302-8] Mg recoil implantation into GaN with incident Nitrogen ion (4)

〇Toshikazu Yamada¹, Hisashi YAMADA¹, Tokio TAKAHASHI¹, Mituaki SIMIZU¹ (1.National Institute of Advanced Industrial Science & Technology)

Keywords:GaN, ion implantation, Mg