2019年第80回応用物理学会秋季学術講演会

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10 スピントロニクス・マグネティクス » 10 スピントロニクス・マグネティクス(ポスター)

[18p-PB1-1~84] 10 スピントロニクス・マグネティクス(ポスター)

2019年9月18日(水) 13:30 〜 15:30 PB1 (第二体育館)

13:30 〜 15:30

[18p-PB1-3] Structural and magnetic properties of nitrogen co-doped II-VI diluted magnetic semiconductor (Zn,Fe)Te thin films grown under Zn-rich condition by MBE

〇(D)INDRAJIT SAHA1、YUTA TOMOHIRO1、KEN KANAZAWA1、HIROAKI NITANI2、SHINJI KURODA1 (1.Inst. Mater. Sci., Univ. Tsukuba、2.KEK)

キーワード:Diluted magnetic semiconductor, Room Temperature Ferromagnetism

We have investigated the structural and Magnetic properties of Zn1-xFexTe:N thin films by molecular beam epitaxy (MBE) in excess of Zn flux over Te flux with the Fe composition fixed at x = 0.014 and the N concentration varied in the range of [N] = 1018 - 1020 cm-3. We have observed drastic change of magnetic properties from van-Vleck paramagnetic (Undoped film) to room tempearture frromagnetic behavior (N-doped films). In the intermediate N-doping condition of [N] = 1018 - 1019 cm-3, the observed room temperature ferromagnetic behavior would be attributed the change of Fe valence state from Fe2+ to Fe2+/3+ or to solely Fe3+ due to the incorporation of N.