[18p-PB1-1~84] 10 スピントロニクス・マグネティクス（ポスター）

▲ [18p-PB1-72] Voltage induced coercivity change of Co film grown on Cr₂O₃ barrier

〇Tomohiro Nozaki¹、Makoto Kotono¹、Takayuki Nozaki¹、Hitoshi Kubota¹、Akio Fukushima¹、Shinji Yuasa¹ (1.AIST)

キーワード：voltage control of magnetic anisotropy (VCMA), spintronics, Cr2O3

Co-based ferromagnetic materials exhibit large perpendicular magnetic anisotropy and are promising candidates for voltage control of magnetic anisotropy (VCMA) materials. In this study, voltage-induced coercivity change of Co film grown on corundum-type Cr₂O₃ was investigated. The Cr₂O₃ thin film prepared by the radical-assisted molecular beam epitaxy method exhibit dielectric properties comparable to a thicker film even with a film thickness of 30 nm. In the Pt/Cr₂O₃/Co/Pt structure, obvious coercivity change due to voltage application was observed.